RFD14N05SM Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: RFD14N05SM
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 48 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 14 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 26 ns
Cossⓘ - Выходная емкость: 185 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: TO252AA
- подбор MOSFET транзистора по параметрам
RFD14N05SM Datasheet (PDF)
rfd14n05sm9a.pdf

RFD14N05, RFD14N05SMData Sheet February 200414A, 50V, 0.100 Ohm, N-Channel Power FeaturesMOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulti
rfd14n05sm9a.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
rfd14n05l rfd14n05lsm rfp14n05l.pdf

RFD14N05L, RFD14N05LSM, RFP14N05LData Sheet November 200414A, 50V, 0.100 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utili
rfd14n05-sm rfp14n05.pdf

RFD14N05, RFD14N05SM, RFP14N05Data Sheet January 200214A, 50V, 0.100 Ohm, N-Channel Power FeaturesMOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utilization of silicon
Другие MOSFET... RFB18N10CS , RFD10P03L , RFD10P03LSM , RFD12N06RLE , RFD12N06RLESM , RFD14N05 , RFD14N05L , RFD14N05LSM , SPW47N60C3 , RFD14N06L , RFD14N06LSM , RFD15N06LE , RFD15N06LESM , RFD15P05 , RFD15P06 , RFD15P06SM , RFD16N03L .
History: TSA100N20M | BLS6G2731S-120 | MTN7N60E3 | IRHM9150 | DMP3056L | TK49N65W | SIHF9640L
History: TSA100N20M | BLS6G2731S-120 | MTN7N60E3 | IRHM9150 | DMP3056L | TK49N65W | SIHF9640L



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