APT66F60L - аналоги, параметры транзистора - Справочник транзисторов

APT66F60L технические параметры

..1. Size:212K microsemi
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APT66F60B2 APT66F60L 600V, 70A, 0.09 Max, trr 310ns N-Channel FREDFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate r

..2. Size:255K inchange semiconductor
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isc N-Channel MOSFET Transistor APT66F60L FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.09 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

6.1. Size:375K inchange semiconductor
apt66f60b2.pdf pdf_icon

isc N-Channel MOSFET Transistor APT66F60B2 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.09 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

9.1. Size:115K microsemi
apt66m60b2 apt66m60l.pdf pdf_icon

APT66M60B2 APT66M60L 600V, 70A, 0.09 Max N-Channel MOSFET T-MaxTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capa