APT66F60L Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT66F60L
Тип транзистора: MOFETS
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1135 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 70 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 85 ns
Cossⓘ - Выходная емкость: 1210 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
Тип корпуса: TO-264
- подбор MOSFET транзистора по параметрам
APT66F60L Datasheet (PDF)
apt66f60b2 apt66f60l.pdf

APT66F60B2 APT66F60L 600V, 70A, 0.09 Max, trr 310ns N-Channel FREDFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate r
apt66f60l.pdf

isc N-Channel MOSFET Transistor APT66F60LFEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.09(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
apt66f60b2.pdf

isc N-Channel MOSFET Transistor APT66F60B2FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.09(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
apt66m60b2 apt66m60l.pdf

APT66M60B2 APT66M60L 600V, 70A, 0.09 MaxN-Channel MOSFET T-MaxTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capa
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK3814-Z | SIHG47N60S | NTHD4N02FT1 | 9N95 | SDF04N40 | SE60210GA | HGI110N08AL
History: 2SK3814-Z | SIHG47N60S | NTHD4N02FT1 | 9N95 | SDF04N40 | SE60210GA | HGI110N08AL



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