APT7590AN - описание и поиск аналогов

TYPICAL PERFORMANCE CURVES APT75GN120B2(G)_L(G) 1200V APT75GN120B2 APT75GN120L APT75GN120B2G* APT75GN120LG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design T-Max TO-264 results in superior VCE(on) perform

TYPICAL PERFORMANCE CURVES APT75GP120JDQ3 1200V APT75GP120JDQ3 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592

TYPICAL PERFORMANCE CURVES APT75GN60LDQ3(G) 600V APT75GN60LDQ3 APT75GN60LDQ3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum TO-264 conduction loss. Easy paralleling is a result of very tight parameter

TYPICAL PERFORMANCE CURVES APT75GN60B(G) 600V APT75GN60B APT75GN60BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and

APT75GP120J 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP switchmode power supplies. C Low Conduction Loss RBSOA rated Low Gate Charge G

APT75GP120B2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E C Low Conduction Loss 100 kHz operation @ 800V, 20A Low Gate Char

TYPICAL PERFORMANCE CURVES APT75GN120B2(G)_L(G) 1200V APT75GN120B2 APT75GN120L APT75GN120B2G* APT75GN120LG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design T-Max TO-264 results in superior VCE(on) perform

APT75GP120B2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E C Low Conduction Loss 100 kHz operation @ 800V, 20A Low Gate Char

APT75GT120JU3 ISOTOP Buck chopper VCES = 1200V IC = 75A @ Tc = 80 C Trench IGBT Application C AC and DC motor control Switched Mode Power Supplies G Features Trench + Field Stop IGBT Technology - Low voltage drop E - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche

TYPICAL PERFORMANCE CURVES APT75GN120J 1200V APT75GN120J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in g

APT75GT120JU2 ISOTOP Boost chopper VCES = 1200V IC = 75A @ Tc = 80 C Trench IGBT Application AC and DC motor control K Switched Mode Power Supplies Power Factor Correction Brake switch C Features Trench + Field Stop IGBT Technology G - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes -

TYPICAL PERFORMANCE CURVES APT75GN120JDQ3 1200V APT75GN120JDQ3 Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A buil

TYPICAL PERFORMANCE CURVES APT75GN60B_SDQ2(G) 600V APT75GN60BDQ2 APT75GN60SDQ2 APT75GN60BDQ2G* APT75GN60SDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum (B) conduction loss. Easy paralleling is a result

TYPICAL PERFORMANCE CURVES APT75GN60B_SDQ2(G) 600V APT75GN60BDQ2 APT75GN60SDQ2 APT75GN60BDQ2G* APT75GN60SDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum (B) conduction loss. Easy paralleling is a result

APT75M50B2 APT75M50L 500V, 75A, 0.075 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and ca

APT75F50B2 APT75F50L 500V, 75A, 0.075 Max, trr 310ns N-Channel FREDFET T-Max TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt c

isc N-Channel MOSFET Transistor APT75F50L FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.075 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

isc N-Channel MOSFET Transistor APT75M50B2 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.075 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

isc N-Channel MOSFET Transistor APT75M50L FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.075 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

isc N-Channel MOSFET Transistor APT75F50B2 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.075 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur