Справочник MOSFET. APT7F100S

 

APT7F100S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT7F100S
   Тип транзистора: MOFETS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 290 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 58 nC
   trⓘ - Время нарастания: 26 ns
   Cossⓘ - Выходная емкость: 158 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
   Тип корпуса: D3PAK

 Аналог (замена) для APT7F100S

 

 

APT7F100S Datasheet (PDF)

 ..1. Size:382K  microsemi
 apt7f100b apt7f100s.pdf

APT7F100S APT7F100S

APT7F100B APT7F100S 1000V, 7A, 2.0 MaxN-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power D3PAKMOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti-mized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge,

 8.1. Size:238K  microsemi
 apt7f120b apt7f120s.pdf

APT7F100S APT7F100S

APT7F120B APT7F120S 1200V, 7A, 2.4 Max, trr 190nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low

 9.1. Size:211K  microsemi
 apt7f80k.pdf

APT7F100S APT7F100S

APT7F80K 800V, 7A, 1.50 MAX,TRR 160nSN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high g

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