APT8014L2FLLG datasheet, аналоги, основные параметры
Наименование производителя: APT8014L2FLLG 📄📄
Тип транзистора: MOFETS
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 893 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 52 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 19 ns
Cossⓘ - Выходная емкость: 1402 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
Тип корпуса: TO-264MAX
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Аналог (замена) для APT8014L2FLLG
- подборⓘ MOSFET транзистора по параметрам
APT8014L2FLLG даташит
apt8014l2fllg.pdf
800V 52A 0.16 APT8014L2FLL APT8014L2FLLG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. R POWER MOS 7 FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combine
apt8014l2fll.pdf
APT8014L2FLL 800V 52A 0.140W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds
apt8014l2ll.pdf
APT8014L2LL 800V 52A 0.140W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent w
apt8014jfll.pdf
APT8014JFLL 800V 42A 0.140W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with
Другие IGBT... APT77N60SC6, APT7F100B, APT7F100S, APT7F120B, APT7F120S, APT7F80K, APT7M120B, APT7M120S, IRLZ44N, APT8018L2VFRG, APT8020B2FLLG, APT8020B2LLG, APT8020LFLLG, APT8020LLLG, APT8024B2FLLG, APT8024B2LLG, APT8024B2VFRG
Параметры MOSFET. Взаимосвязь и компромиссы
History: AGM304A | AO4832 | AGM150P10S
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