APT8024B2LLG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT8024B2LLG
Тип транзистора: MOFETS
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 565 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 31 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 860 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm
Тип корпуса: TO-247
- подбор MOSFET транзистора по параметрам
APT8024B2LLG Datasheet (PDF)
apt8024b2llg apt8024lllg.pdf

APT8024B2LLAPT8024LLL800V 31A 0.240RB2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLLL
apt8024b2ll.pdf

APT8024B2LLAPT8024LLL800V 31A 0.240WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast swi
apt8024b2fll.pdf

APT8024B2FLLAPT8024LFLL800V 31A 0.240WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptiona
apt8024b2vfr.pdf

APT8024B2VFRAPT8024LVFR800V 33A 0.240WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical Sp
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SWK350R06VT | IXFX24N100 | 2SK610 | 2SK2525-01 | AP55T10GH-HF | MTB1D7N03ATH8 | AP60T06GJ-HF
History: SWK350R06VT | IXFX24N100 | 2SK610 | 2SK2525-01 | AP55T10GH-HF | MTB1D7N03ATH8 | AP60T06GJ-HF



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