APT8024B2VFRG - Аналоги. Основные параметры
Наименование производителя: APT8024B2VFRG
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 625 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 33 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 830 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT8024B2VFRG
APT8024B2VFRG технические параметры
apt8024b2vfrg apt8024lvfrg.pdf
APT8024B2VFR APT8024LVFR 800V 33A 0.240 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.
apt8024b2vfr.pdf
APT8024B2VFR APT8024LVFR 800V 33A 0.240W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical Sp
apt8024b2vr.pdf
APT8024B2VR APT8024LVR 800V 33A 0.240W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specifications
apt8024b2fll.pdf
APT8024B2FLL APT8024LFLL 800V 31A 0.240W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona
Другие MOSFET... APT8014L2FLLG , APT8018L2VFRG , APT8020B2FLLG , APT8020B2LLG , APT8020LFLLG , APT8020LLLG , APT8024B2FLLG , APT8024B2LLG , AON6414A , APT8024LFLLG , APT8024LLLG , APT8024LVFRG , APT8035JN , APT8043BFLLG , APT8043SFLLG , APT8043SLL , APT8052BFLLG .
Список транзисторов
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