APT8024B2VFRG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT8024B2VFRG
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 625 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 33 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 830 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT8024B2VFRG
APT8024B2VFRG Datasheet (PDF)
apt8024b2vfrg apt8024lvfrg.pdf

APT8024B2VFRAPT8024LVFR800V 33A 0.240B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
apt8024b2vfr.pdf

APT8024B2VFRAPT8024LVFR800V 33A 0.240WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical Sp
apt8024b2vr.pdf

APT8024B2VRAPT8024LVR800V 33A 0.240WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specifications
apt8024b2fll.pdf

APT8024B2FLLAPT8024LFLL800V 31A 0.240WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptiona
Другие MOSFET... APT8014L2FLLG , APT8018L2VFRG , APT8020B2FLLG , APT8020B2LLG , APT8020LFLLG , APT8020LLLG , APT8024B2FLLG , APT8024B2LLG , IRFB4110 , APT8024LFLLG , APT8024LLLG , APT8024LVFRG , APT8035JN , APT8043BFLLG , APT8043SFLLG , APT8043SLL , APT8052BFLLG .
History: HM80N15 | ELM56801EA | AP4501GM-HF | UF740G-TF1-T | SVFP10N60CFJD | TK13A45D | 25N06G
History: HM80N15 | ELM56801EA | AP4501GM-HF | UF740G-TF1-T | SVFP10N60CFJD | TK13A45D | 25N06G



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