APT8024B2VFRAPT8024LVFR800V 33A 0.240B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

APT8024B2LLAPT8024LLL800V 31A 0.240RB2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLLL

APT8024B2FLLAPT8024LFLL800V 31A 0.260RB2FLL POWER MOS 7 FREDFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesa

APT8024B2FLLAPT8024LFLL800V 31A 0.240WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptiona

APT8024B2VFRAPT8024LVFR800V 33A 0.240WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical Sp

APT8024JLL800V 29A 0.240WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's"U

APT8024B2LLAPT8024LLL800V 31A 0.240WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast swi

APT8024B2VRAPT8024LVR800V 33A 0.240WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specifications

APT8024JFLL800V 29A 0.240WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with