APT8043BFLLG datasheet, аналоги, основные параметры

Наименование производителя: APT8043BFLLG  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 403 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5 ns

Cossⓘ - Выходная емкость: 485 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.43 Ohm

Тип корпуса: TO-247

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APT8043BFLLG даташит

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 apt8043bfllg apt8043sfllg.pdf pdf_icon

APT8043BFLLG

APT8043BFLL APT8043SFLL 800V 20A 0.430 R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SFLL

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 apt8043bfll.pdf pdf_icon

APT8043BFLLG

APT8043BFLL APT8043SFLL 800V 20A 0.430W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

 3.2. Size:376K  inchange semiconductor
 apt8043bfll.pdf pdf_icon

APT8043BFLLG

isc N-Channel MOSFET Transistor APT8043BFLL FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.43 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

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 apt8043bll.pdf pdf_icon

APT8043BFLLG

APT8043BLL APT8043SLL 800V 20A 0.430W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

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