Справочник MOSFET. APT8052BLLG

 

APT8052BLLG Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APT8052BLLG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 298 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 405 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.52 Ohm
   Тип корпуса: TO-247
     - подбор MOSFET транзистора по параметрам

 

APT8052BLLG Datasheet (PDF)

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APT8052BLLG

APT8052BLLAPT8052SLL800V 15A 0.520RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)SLLand Qg. Power MOS 7 combines lower conduction and switching lossesalong

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APT8052BLLG

APT8052BLLAPT8052SLL800V 15A 0.520WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching

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APT8052BLLG

isc N-Channel MOSFET Transistor APT8052BLLFEATURESDrain Current I =15A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.52(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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APT8052BLLG

APT8052BFLLAPT8052SFLL800V 15A 0.520R POWER MOS 7 FREDFETBFLLD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSFLL

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCE2301A | TPH4R008NH | WSF4042 | IRFSZ34A | FDD9407-F085 | VMM1500-0075X2 | IXFN100N10S1

 

 
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