APT8052BLLG datasheet, аналоги, основные параметры

Наименование производителя: APT8052BLLG  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 298 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6 ns

Cossⓘ - Выходная емкость: 405 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.52 Ohm

Тип корпуса: TO-247

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APT8052BLLG даташит

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 apt8052bllg.pdf pdf_icon

APT8052BLLG

APT8052BLL APT8052SLL 800V 15A 0.520 R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) SLL and Qg. Power MOS 7 combines lower conduction and switching losses along

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 apt8052bll.pdf pdf_icon

APT8052BLLG

APT8052BLL APT8052SLL 800V 15A 0.520W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

 4.2. Size:376K  inchange semiconductor
 apt8052bll.pdf pdf_icon

APT8052BLLG

isc N-Channel MOSFET Transistor APT8052BLL FEATURES Drain Current I =15A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.52 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

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 apt8052bfllg apt8052sfllg.pdf pdf_icon

APT8052BLLG

APT8052BFLL APT8052SFLL 800V 15A 0.520 R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SFLL

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