APT84M50B2 - Аналоги. Основные параметры
Наименование производителя: APT84M50B2
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1135 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 84 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 70 ns
Cossⓘ - Выходная емкость: 1455 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT84M50B2
APT84M50B2 технические параметры
apt84m50b2 apt84m50l.pdf
APT84M50B2 APT84M50L 500V, 84A, 0.065 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and ca
apt84m50b2.pdf
isc N-Channel MOSFET Transistor APT84M50B2 FEATURES Drain Current I = 84A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.065 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur
apt84m50l.pdf
isc N-Channel MOSFET Transistor APT84M50L FEATURES Drain Current I = 84A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.065 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
apt84f50b2 apt84f50l.pdf
APT84F50B2 APT84F50L 500V, 84A, 0.065 Max, trr 320ns N-Channel FREDFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate res
Другие MOSFET... APT8075AN , APT8075BVFRG , APT8090AN , APT8090BN , APT80F60J , APT80M60J , APT84F50B2 , APT84F50L , 4435 , APT84M50L , APT8M100B , APT8M100S , APT8M80K , APT901R1AN , APT901R1BN , APT901R1HN , APT901R3AN .
History: APT84M50L
History: APT84M50L
Список транзисторов
Обновления
MOSFET: AP50N04Q | AP50N04K | AP50N04GD | AP5040QD | AP4946S | AP4847 | AP4846 | AP4813K | AP4812S | AP4812 | AP40P05 | AP40P04Q | AP40P04K | AP40P04G | AP40N100LK | AP40N100K
Popular searches
bc139 | 2sc1398 | 2sd218 | bc547 характеристики | me15n10-g | 2n2905 equivalent | 2sa640 | 2sb527



