Справочник MOSFET. APT84M50B2

 

APT84M50B2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT84M50B2
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1135 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 84 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 340 nC
   trⓘ - Время нарастания: 70 ns
   Cossⓘ - Выходная емкость: 1455 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
   Тип корпуса: TO-247

 Аналог (замена) для APT84M50B2

 

 

APT84M50B2 Datasheet (PDF)

 ..1. Size:211K  microsemi
 apt84m50b2 apt84m50l.pdf

APT84M50B2 APT84M50B2

APT84M50B2 APT84M50L 500V, 84A, 0.065 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and ca

 ..2. Size:376K  inchange semiconductor
 apt84m50b2.pdf

APT84M50B2 APT84M50B2

isc N-Channel MOSFET Transistor APT84M50B2FEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 6.1. Size:256K  inchange semiconductor
 apt84m50l.pdf

APT84M50B2 APT84M50B2

isc N-Channel MOSFET Transistor APT84M50LFEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.1. Size:212K  microsemi
 apt84f50b2 apt84f50l.pdf

APT84M50B2 APT84M50B2

APT84F50B2 APT84F50L500V, 84A, 0.065 Max, trr 320nsN-Channel FREDFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate res

 9.2. Size:376K  inchange semiconductor
 apt84f50b2.pdf

APT84M50B2 APT84M50B2

isc N-Channel MOSFET Transistor APT84F50B2FEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 9.3. Size:255K  inchange semiconductor
 apt84f50l.pdf

APT84M50B2 APT84M50B2

isc N-Channel MOSFET Transistor APT84F50LFEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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