APT84M50B2 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT84M50B2
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1135 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 84 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 70 ns
Cossⓘ - Выходная емкость: 1455 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
Тип корпуса: TO-247
- подбор MOSFET транзистора по параметрам
APT84M50B2 Datasheet (PDF)
apt84m50b2 apt84m50l.pdf

APT84M50B2 APT84M50L 500V, 84A, 0.065 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and ca
apt84m50b2.pdf

isc N-Channel MOSFET Transistor APT84M50B2FEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
apt84m50l.pdf

isc N-Channel MOSFET Transistor APT84M50LFEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
apt84f50b2 apt84f50l.pdf

APT84F50B2 APT84F50L500V, 84A, 0.065 Max, trr 320nsN-Channel FREDFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate res
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: CS50N06D | WFD4N60 | NDT6N70 | SI1471DH | H3055LJ | IPD50R280CE | CHM634PAGP
History: CS50N06D | WFD4N60 | NDT6N70 | SI1471DH | H3055LJ | IPD50R280CE | CHM634PAGP



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