Справочник MOSFET. APTC90DDA12CT1G

 

APTC90DDA12CT1G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APTC90DDA12CT1G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 270 nC
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 330 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
   Тип корпуса: MODULE

 Аналог (замена) для APTC90DDA12CT1G

 

 

APTC90DDA12CT1G Datasheet (PDF)

 0.1. Size:219K  microsemi
 aptc90dda12ct1g.pdf

APTC90DDA12CT1G APTC90DDA12CT1G

APTC90DDA12CT1G Dual boost chopper VDSS = 900V Super Junction MOSFET RDSon = 120m max @ Tj = 25C ID = 30A @ Tc = 25C SiC chopper diode Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged

 7.1. Size:218K  microsemi
 aptc90dam60ct1g.pdf

APTC90DDA12CT1G APTC90DDA12CT1G

APTC90DAM60CT1GVDSS = 900V Boost chopper RDSon = 60m max @ Tj = 25C Super Junction MOSFET ID = 59A @ Tc = 25C Power Module Application AC and DC motor control 5 6 11 Switched Mode Power Supplies Power Factor Correction Features CR1 - Ultra low RDSon 3NTC- Low Miller capacitance 4Q2- Ultra low gate charge - Avalanche energy rated

 8.1. Size:219K  microsemi
 aptc90skm60ct1g.pdf

APTC90DDA12CT1G APTC90DDA12CT1G

APTC90SKM60CT1GVDSS = 900V Buck chopper RDSon = 60m max @ Tj = 25C Super Junction MOSFET ID = 59A @ Tc = 25C SiC chopper diode Application AC and DC motor control 115 6 Switched Mode Power Supplies Features Q1 - Ultra low RDSon 7- Low Miller capacitance NTC8- Ultra low gate charge 3- Avalanche energy rated 4- Very rugged CR2

 8.2. Size:210K  microsemi
 aptc90h12sctg.pdf

APTC90DDA12CT1G APTC90DDA12CT1G

APTC90H12SCTG Full - Bridge VDSS = 900V Series & SiC parallel diodes RDSon = 120m max @ Tj = 25CSuper Junction ID = 30A @ Tc = 25C MOSFET Power ModuleApplication Motor control VBUS Switched Mode Power Supplies Uninterruptible Power Supplies CR1A CR3AFeatures CR1B CR3BQ1 Q3 G3G1- Ultra low RDSon OUT1 OUT2S3S1- Low Miller capaci

 8.3. Size:207K  microsemi
 aptc90am60sctg.pdf

APTC90DDA12CT1G APTC90DDA12CT1G

APTC90AM60SCTG VDSS = 900V Phase leg RDSon = 60m max @ Tj = 25C Series & SiC parallel diodes ID = 59A @ Tc = 25C Super Junction . MOSFET Power Module Application Motor control Switched Mode Power Supplies Uninterruptible Power Supplies NTC2VBUS Features Q1- Ultra low RDSon - Low Miller capacitance G1- Ultra low gate charge OUT- A

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