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APTM100A13SCG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APTM100A13SCG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 65 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 562 nC
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 2600 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.156 Ohm
   Тип корпуса: MODULE

 Аналог (замена) для APTM100A13SCG

 

 

APTM100A13SCG Datasheet (PDF)

 ..1. Size:281K  microsemi
 aptm100a13scg.pdf

APTM100A13SCG APTM100A13SCG

APTM100A13SCG VDSS = 1000V Phase leg RDSon = 130m typ @ Tj = 25C Series & SiC parallel diodes ID = 65A @ Tc = 25C MOSFET Power Module Application Motor control VBUS Switched Mode Power Supplies Uninterruptible Power Supplies Q1Features G1 Power MOS 7 MOSFETs OUT- Low RDSon S1- Low input and Miller capacitance - Low gate charge Q2

 6.1. Size:293K  microsemi
 aptm100a23sctg.pdf

APTM100A13SCG APTM100A13SCG

APTM100A23SCTG VDSS = 1000V Phase leg RDSon = 230m typ @ Tj = 25C Series & SiC parallel diodes ID = 36A @ Tc = 25C MOSFET Power Module Application Motor control Switched Mode Power Supplies NTC2 Uninterruptible Power Supplies VBUSFeatures Q1 Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance G1OUT - Low gate charge -

 7.1. Size:264K  microsemi
 aptm100um65scavg.pdf

APTM100A13SCG APTM100A13SCG

APTM100UM65SCAVGVDSS = 1000V Single switch RDSon = 65m typ @ Tj = 25C Series & SiC parallel diodes ID = 145A @ Tc = 25C MOSFET Power ModuleD Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control DKFeatures Power MOS 7 MOSFETs - Low RDSon G - Low input and Miller capacitance - Low g

 7.2. Size:197K  microsemi
 aptm100da18ct1g.pdf

APTM100A13SCG APTM100A13SCG

APTM100DA18CT1GVDSS = 1000V Boost chopper RDSon = 180m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 40A @ Tc = 25C Power Module Application 5 6 11 AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 Features Power MOS 8 MOSFETs 3NTC- Low RDSon 4Q2- Low input and Miller capacitance - Low gate charge

 7.3. Size:298K  microsemi
 aptm100h45sctg.pdf

APTM100A13SCG APTM100A13SCG

APTM100H45SCTG Full bridge VDSS = 1000V RDSon = 450m typ @ Tj = 25C Series & SiC parallel diodes ID = 18A @ Tc = 25C MOSFET Power Module Application Motor control VBUS Switched Mode Power Supplies Uninterruptible Power Supplies CR1A CR3AFeatures CR1B CR3B Power MOS 7 MOSFETs Q1 Q3- Low RDSon G1 G3- Low input and Miller capacitance OUT

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