APTM120DA30CT1G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APTM120DA30CT1G
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 657 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 31 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 560 nC
trⓘ - Время нарастания: 60 ns
Cossⓘ - Выходная емкость: 1340 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm
Тип корпуса: MODULE
Аналог (замена) для APTM120DA30CT1G
APTM120DA30CT1G Datasheet (PDF)
aptm120da30ct1g.pdf
APTM120DA30CT1G VDSS = 1200V Boost chopper RDSon = 300m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 31A @ Tc = 25C Power Module Application 5 6 11 AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1Features 3NTC Power MOS 8 MOSFET 4- Low RDSon Q2- Low input and Miller capacitance - Low gate charge
aptm120u10scavg.pdf
APTM120U10SCAVG VDSS = 1200V Single switch RDSon = 100m typ @ Tj = 25C Series & SiC parallel diodes ID = 116A @ Tc = 25C MOSFET Power Module D Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control DKFeatures Power MOS 7 MOSFETs - Low RDSon G - Low input and Miller capacitance - Low
aptm100um65scavg.pdf
APTM100UM65SCAVGVDSS = 1000V Single switch RDSon = 65m typ @ Tj = 25C Series & SiC parallel diodes ID = 145A @ Tc = 25C MOSFET Power ModuleD Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control DKFeatures Power MOS 7 MOSFETs - Low RDSon G - Low input and Miller capacitance - Low g
aptm100da18ct1g.pdf
APTM100DA18CT1GVDSS = 1000V Boost chopper RDSon = 180m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 40A @ Tc = 25C Power Module Application 5 6 11 AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 Features Power MOS 8 MOSFETs 3NTC- Low RDSon 4Q2- Low input and Miller capacitance - Low gate charge
aptm100a23sctg.pdf
APTM100A23SCTG VDSS = 1000V Phase leg RDSon = 230m typ @ Tj = 25C Series & SiC parallel diodes ID = 36A @ Tc = 25C MOSFET Power Module Application Motor control Switched Mode Power Supplies NTC2 Uninterruptible Power Supplies VBUSFeatures Q1 Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance G1OUT - Low gate charge -
aptm100h45sctg.pdf
APTM100H45SCTG Full bridge VDSS = 1000V RDSon = 450m typ @ Tj = 25C Series & SiC parallel diodes ID = 18A @ Tc = 25C MOSFET Power Module Application Motor control VBUS Switched Mode Power Supplies Uninterruptible Power Supplies CR1A CR3AFeatures CR1B CR3B Power MOS 7 MOSFETs Q1 Q3- Low RDSon G1 G3- Low input and Miller capacitance OUT
aptm100a13scg.pdf
APTM100A13SCG VDSS = 1000V Phase leg RDSon = 130m typ @ Tj = 25C Series & SiC parallel diodes ID = 65A @ Tc = 25C MOSFET Power Module Application Motor control VBUS Switched Mode Power Supplies Uninterruptible Power Supplies Q1Features G1 Power MOS 7 MOSFETs OUT- Low RDSon S1- Low input and Miller capacitance - Low gate charge Q2
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Список транзисторов
Обновления
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