RCJ120N25 - параметры транзистора MOSFET, его аналоги, datasheet

RCJ120N25 Datasheet (PDF)

..1. Size:436K rohm
rcj120n25.pdf pdf_icon

RCJ120N25 Nch 250V 12A Power MOSFET DatasheetlOutline(2) VDSS250VLPT(S)(SC-83)RDS(on) (Max.)235mWID12A(1) PD40W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Drive circuits can be simple.4) Parallel use is easy.*1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant6) 100% Avalanche tes

..2. Size:254K inchange semiconductor
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isc N-Channel MOSFET Transistor RCJ120N25FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 235m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

6.1. Size:436K rohm
rcj120n20.pdf pdf_icon

RCJ120N20 Nch 200V 12A Power MOSFET DatasheetlOutline(2) VDSS200VLPT(S)(SC-83)RDS(on) (Max.)325mWID12A(1) PD (3) 40WlFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Drive circuits can be simple.4) Parallel use is easy.*1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant6) 100% Avalanche t

6.2. Size:255K inchange semiconductor
rcj120n20.pdf pdf_icon

isc N-Channel MOSFET Transistor RCJ120N20FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 325m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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