RCX081N20 - описание и поиск аналогов

RCX081N20 Nch 200V 8.0A Power MOSFET Datasheet lOutline VDSS 200V TO-220FM RDS(on) (Max.) 770mW ID 8.0A (3) PD 40W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested lP

isc N-Channel MOSFET Transistor RCX081N20 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R = 0.77 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

Data Sheet 10V Drive Nch MOSFET RCX080N20 Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. 2.54 2.54 0.75 2.6 (1) (2) (3) Application Switching Packaging specifications Inner circuit Package Bulk Type Code - 1 Basic ordering un

Data Sheet 10V Drive Nch MOSFET RCX080N25 Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1) Low on-resistance. 1.2 1.3 2) Low input capacitance. 3) High ESD. 0.8 2.54 2.54 0.75 2.6 (1) (2) (3) Application Switching Packaging specifications Inner circuit Package Bulk Type Code - 1 Basic ordering uni

isc N-Channel MOSFET Transistor RCX080N25 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos