R5016FNJDatasheetNch 500V 16A Power MOSFETlOutlinel LPT(S)VDSS 500VRDS(on)(Max.) 0.325 ID 16A PD 50W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed to

Data Sheet10V Drive Nch MOSFET R5016FNX Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1.21) Low on-resistance.1.32) Low input capacitance.0.83) High ESD.(1) Gate2.54 2.54 0.75 2.6(2) Drain(1) (2) (3)(3) Source ApplicationSwitching Packaging specifications Inner circuitPackage BulkType

10V Drive Nch MOSFET R5016ANJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS10.1 4.51.3 Features 1) Low on-resistance. 1.242) Fast switching speed. 3) Wide SOA (safe operating area). 2.54 0.40.784) Gate-source voltage (VGSS) guaranteed to be 30V. 2.75.08(1) Base (Gate) (1) (2) (3)5) Drive circuits can be simple. (2) Collector (Drain)6) P

R5016ANX Transistors 10V Drive Nch MOSFET R5016ANX Dimensions (Unit : mm) Structure Silicon N-channel MOSFETTO-220FM10.0 3.2 4.52.8 Features 1) Low on-resistance. 1.22) Fast switching speed. 1.33) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) 0.8(1)Baseguaranteed to be 30V. 2.54 2.54 0.75 2.6(2)Collector (1) (2) (3)5) Drive circuit