R520 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: R520
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 1 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 70 ns
Выходная емкость (Cd): 400 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.3 Ohm
Тип корпуса: TO-92
R520 Datasheet (PDF)
bfr520t 2.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETM3D173BFR520TNPN 9 GHz wideband transistorProduct specification 2000 Apr 03Supersedes data of 1999 Nov 02Philips Semiconductors Product specificationNPN 9 GHz wideband transistor BFR520TFEATURES DESCRIPTION High power gain Silicon NPN transistor encapsulatedin a plastic SOT416 (SC-75) package. Low noise figure 3fpage High tr
bfr520t.pdf
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DISCRETE SEMICONDUCTORS DATA SHEETM3D173BFR520TNPN 9 GHz wideband transistorProduct specification 2000 Apr 03Supersedes data of 1999 Nov 02NXP Semiconductors Product specificationNPN 9 GHz wideband transistor BFR520TFEATURES DESCRIPTION High power gain Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. Low noise figure 3lfpage High tr
bfr520.pdf
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BFR520NPN 9 GHz wideband transistorRev. 03 1 September 2004 Product data sheet1. Product profile1.1 General descriptionThe BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package.1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.1.3 Applications RF front end wideband applic
bfr520 cnv 2.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETBFR520NPN 9 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 9 GHz wideband transistor BFR520telephones (CT1, CT2, DECT, etc.),FEATURESradar detectors, pagers and satellite High power gainTV tuners (SATV) and repeater Low noise figu
r5205cnd.pdf
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10V Drive Nch MOSFET R5205CND Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.55.12.30.5Features1) Low resistance.2) High speed switching.0.750.650.92.3(1)Gate2.3(1) (2) (3)0.5(2)Drain1.0(3)Source Abbreviated symbol : R5205C ApplicationSwitching Packaging specifications Inner circuitPackage Taping2Type
r5207and.pdf
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Data Sheet10V Drive Nch MOSFET R5207AND Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) High-speed switching.0.753) Wide SOA.(1) Gate0.650.9 2.3(2) Drain(1) (2) (3)2.3 0.54) Drive circuits can be simple.(3) Source1.05) Parallel use is easy. ApplicationSwit
ipa60r520e6.pdf
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R520E6Data SheetRev. 2.0, 2010-04-09FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPP60R520E6, IPA60R520E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principlea
ipa50r520cp.pdf
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TypeIPA50R520CPCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DPackage @Tjmax 550 V"1 W *EM;IJ
ipp60r520e6.pdf
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R520E6Data SheetRev. 2.0, 2010-04-09FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPP60R520E6, IPA60R520E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principlea
ips50r520cp.pdf
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IPS50R520CPCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures @Tjmax 550 V!0 V )DL:HI ;>I / M ., + g 0.520 DS(on) maxV 2 AIG6 ADL INV -7 ;G:: A:69 EA6I>C6CI1)PGTO251V . J6Ai;>:9 688DG9>C >53:10 2;= V %6G9 6C9 HD;IHL>I8=>C
ipa60r520cp.pdf
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IPA60R520CPCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 1j max 650 V!0 U )DK:GH ;>H / L .ON g 1? X 0.520 W!0 DC B6L U 2 AHF6 ADK HMU . I6A>;>:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound-$ 1, #-
ipd50r520cp.pdf
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TypeIPD50R520CPCoolMOSTM Power TransistorProduct SummaryProduct SummaryPackageV"1@Tjmax 550 VV"1@Tjmax 550 VV*EL;HI
ipp60r520e6 ipa60r520e6.pdf
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R520E6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS E6 Power Transistor IPP60R520E6, IPA60R520E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principleand p
ipb60r520cp.pdf
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IPB60R520CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tj,max 650 VDS Lowest figure-of-merit RON x QgR @ Tj = 25C 0.520DS(on),max Ultra low gate chargeQ 24 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO263 Pb-free lead plating; RoHS compliantCoolMOS CP is d
ipd60r520cp.pdf
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IPD60R520CPCIMOSTM #:A0:9 688DF9>CC6CH PGTO252 ::7!"% # 4= /0=4290/ 1:H8=>C
ipi60r520cp.pdf
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IPI60R520CPCIMOSTM #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compoundPGTO262
ipp60r520cp.pdf
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IPP60R520CPCIMOSTM #:A0:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compoundPGTO220
tpd65r520d.pdf
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TPD65R520D Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh
tpa65r520d tpd65r520d.pdf
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TPA65R520D,TPD65R520DWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest
fcr520b.pdf
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FCR520B NPN Guo Xin Jia Pin SEMICONDUTORFCR520B NPN SOT-23 VHFUHF CATV
ipa60r520e6.pdf
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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R520E6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipa50r520cp.pdf
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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R520CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipp50r520cp.pdf
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isc N-Channel MOSFET Transistor IPP50R520CPIIPP50R520CPFEATURESStatic drain-source on-resistance:RDS(on) 0.52Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a
ipp60r520e6.pdf
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isc N-Channel MOSFET Transistor IPP60R520E6IIPP60R520E6FEATURESStatic drain-source on-resistance:RDS(on) 0.52Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL
ipa60r520cp.pdf
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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R520CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipa60r520c6.pdf
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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R520C6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipd50r520cp.pdf
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isc N-Channel MOSFET Transistor IPD50R520CP, IIPD50R520CPFEATURESStatic drain-source on-resistance:RDS(on)520mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSS
bfr520.pdf
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isc Silicon NPN RF Transistor BFR520DESCRIPTIONHigh Power GainHigh Current Gain Bandwidth ProductLow Noise FigureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for RF frontend in wideband applications in theGHz range,such as analog and digital cellular telephones,cordless.ABSOLUTE MAXIMUM RATINGS(T =25)a
ipb60r520cp.pdf
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Isc N-Channel MOSFET Transistor IPB60R520CPFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
ipd60r520cp.pdf
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isc N-Channel MOSFET Transistor IPD60R520CP,IIPD60R520CPFEATURESStatic drain-source on-resistance:RDS(on)0.52Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag
ipi60r520cp.pdf
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isc N-Channel MOSFET Transistor IPI60R520CPFEATURESStatic drain-source on-resistance:RDS(on) 0.52Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
ipp60r520cp.pdf
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isc N-Channel MOSFET Transistor IPP60R520CPIIPP60R520CPFEATURESStatic drain-source on-resistance:RDS(on) 0.52Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a
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