R520 - описание и поиск аналогов

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR520T NPN 9 GHz wideband transistor Product specification 2000 Apr 03 Supersedes data of 1999 Nov 02 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T FEATURES DESCRIPTION High power gain Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. Low noise figure 3 fpage High tr

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR520T NPN 9 GHz wideband transistor Product specification 2000 Apr 03 Supersedes data of 1999 Nov 02 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T FEATURES DESCRIPTION High power gain Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. Low noise figure 3 lfpage High tr

BFR520 NPN 9 GHz wideband transistor Rev. 03 1 September 2004 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. 1.3 Applications RF front end wideband applic

DISCRETE SEMICONDUCTORS DATA SHEET BFR520 NPN 9 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 telephones (CT1, CT2, DECT, etc.), FEATURES radar detectors, pagers and satellite High power gain TV tuners (SATV) and repeater Low noise figu

10V Drive Nch MOSFET R5205CND Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 5.1 2.3 0.5 Features 1) Low resistance. 2) High speed switching. 0.75 0.65 0.9 2.3 (1)Gate 2.3 (1) (2) (3) 0.5 (2)Drain 1.0 (3)Source Abbreviated symbol R5205C Application Switching Packaging specifications Inner circuit Package Taping 2 Type

Data Sheet 10V Drive Nch MOSFET R5207AND Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 2) High-speed switching. 0.75 3) Wide SOA. (1) Gate 0.65 0.9 2.3 (2) Drain (1) (2) (3) 2.3 0.5 4) Drive circuits can be simple. (3) Source 1.0 5) Parallel use is easy. Application Swit

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPP60R520E6, IPA60R520E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle a

Type IPA50R520CP C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Package @Tjmax 550 V "1 W *EM;IJ

IPP50R520CP # %?88,

MOSFET + =L9D - PA

MOSFET + =L9D - PA

MOSFET + =L9D - PA

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPP60R520E6, IPA60R520E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle a

IPS50R520CP C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features @Tjmax 550 V !0 V )DL HI ;>I / M . , + g 0.520 DS(on) max V 2 AIG6 ADL IN V -7 ;G A 69 EA6I>C6CI 1) PG TO251 V . J6Ai;> 9 688DG9>C >53 10 2;= V %6G9 6C9 HD;IHL>I8=>C

IPA60R520CP C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 1j max 650 V !0 U )DK GH ;>H / L . ON g 1? X 0.520 W !0 DC B6L U 2 AHF6 ADK HM U . I6A>;> 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound -$ 1, #-

Type IPD50R520CP CoolMOSTM Power Transistor Product Summary Product Summary Package V"1 @Tjmax 550 V V"1 @Tjmax 550 V V *EL;HI

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS E6 Power Transistor IPP60R520E6, IPA60R520E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p

IPB60R520CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS Lowest figure-of-merit RON x Qg R @ Tj = 25 C 0.520 DS(on),max Ultra low gate charge Q 24 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO263 Pb-free lead plating; RoHS compliant CoolMOS CP is d

IPD60R520CP C IMOSTM # A0 9 688DF9>CC6CH PG TO252 7!"% # 4= /0=4290/ 1 H8=>C

IPI60R520CP C IMOSTM # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO262

IPP60R520CP C IMOSTM # A0 9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound PG TO220

BLS60R520 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS60R520, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

TPD65R520D Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh

TPA65R520D,TPD65R520D Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R520E6 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R520CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

isc N-Channel MOSFET Transistor IPP50R520CP IIPP50R520CP FEATURES Static drain-source on-resistance RDS(on) 0.52 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a

isc N-Channel MOSFET Transistor IPP60R520E6 IIPP60R520E6 FEATURES Static drain-source on-resistance RDS(on) 0.52 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOL

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R520CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R520C6 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

isc N-Channel MOSFET Transistor IPD50R520CP, IIPD50R520CP FEATURES Static drain-source on-resistance RDS(on) 520m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS

isc Silicon NPN RF Transistor BFR520 DESCRIPTION High Power Gain High Current Gain Bandwidth Product Low Noise Figure Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones, cordless. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

Isc N-Channel MOSFET Transistor IPB60R520CP FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

isc N-Channel MOSFET Transistor IPD60R520CP,IIPD60R520CP FEATURES Static drain-source on-resistance RDS(on) 0.52 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag

isc N-Channel MOSFET Transistor IPI60R520CP FEATURES Static drain-source on-resistance RDS(on) 0.52 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

isc N-Channel MOSFET Transistor IPP60R520CP IIPP60R520CP FEATURES Static drain-source on-resistance RDS(on) 0.52 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a