R6007ENJ
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: R6007ENJ
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 40
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 7
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 20
nC
trⓘ -
Время нарастания: 25
ns
Cossⓘ - Выходная емкость: 390
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.62
Ohm
Тип корпуса:
SC-83
Аналог (замена) для R6007ENJ
R6007ENJ
Datasheet (PDF)
..1. Size:730K rohm
r6007enj.pdf 
R6007ENJ Nch 600V 7A Power MOSFET Data SheetlOutline(2) VDSS600VLPT(S)(SC-83)RDS(on) (Max.)0.620WID7A(1) PD40W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-fr
..2. Size:255K inchange semiconductor
r6007enj.pdf 
isc N-Channel MOSFET Transistor R6007ENJFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 620m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
7.1. Size:770K rohm
r6007enx.pdf 
R6007ENX Nch 600V 7A Power MOSFET Data SheetlOutlineVDSS600V TO-220FMRDS(on) (Max.)0.620WID7A(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead
7.2. Size:251K inchange semiconductor
r6007enx.pdf 
isc N-Channel MOSFET Transistor R6007ENXFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 620m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
9.1. Size:2252K 1
r6007jnj.pdf 
R6007JNJDatasheetNch 600V 7A Power MOSFETlOutlinel LPT(S)VDSS600VRDS(on)(Max.)0.780ID7APD96W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPack
9.2. Size:1482K 1
r6007jnd3.pdf 
R6007JND3DatasheetNch 600V 7A Power MOSFETlOutlinel TO-252VDSS600VRDS(on)(Max.)0.780ID7APD96W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPac
9.3. Size:2206K 1
r6007jnx.pdf 
R6007JNXDatasheetNch 600V 7A Power MOSFETlOutlinel TO-220FMVDSS600VRDS(on)(Max.)0.780ID7APD46W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPa
9.4. Size:2368K rohm
r6007mnj.pdf 
R6007MNJDatasheetNch 600V 7A Power MOSFETlOutlinel TO-263SVDSS 600V SC-83RDS(on)(Max.) 0.730 LPT(S)ID 7APD 94W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed tobe 30V.5) Drive circuits can be simple.
9.5. Size:1441K rohm
r6007knx.pdf 
R6007KNXDatasheetNch 600V 7A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.62 TO-220FMID7APD 46W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Bulk Reel size (mm) -lAppl
9.6. Size:1450K rohm
r6007knj.pdf 
R6007KNJDatasheetNch 600V 7A Power MOSFETlOutlinel TO-263SVDSS600V SC-83RDS(on)(Max.)0.62 LPT(S)ID7APD78W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbossed PackingT
9.7. Size:255K inchange semiconductor
r6007mnj.pdf 
isc N-Channel MOSFET Transistor R6007MNJFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 730m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
9.8. Size:255K inchange semiconductor
r6007jnj.pdf 
isc N-Channel MOSFET Transistor R6007JNJFEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 780m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
9.9. Size:252K inchange semiconductor
r6007knx.pdf 
isc N-Channel MOSFET Transistor R6007KNXFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 620m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
9.10. Size:266K inchange semiconductor
r6007jnd3.pdf 
isc N-Channel MOSFET Transistor R6007JND3FEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 780m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
9.11. Size:255K inchange semiconductor
r6007knj.pdf 
isc N-Channel MOSFET Transistor R6007KNJFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 620m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
9.12. Size:252K inchange semiconductor
r6007jnx.pdf 
isc N-Channel MOSFET Transistor R6007JNXFEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 780m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
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