R6007ENJ - описание и поиск аналогов

R6007ENJ Nch 600V 7A Power MOSFET Data Sheet lOutline (2) VDSS 600V LPT(S) (SC-83) RDS(on) (Max.) 0.620W ID 7A (1) PD 40W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-fr

isc N-Channel MOSFET Transistor R6007ENJ FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 620m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

R6007ENX Nch 600V 7A Power MOSFET Data Sheet lOutline VDSS 600V TO-220FM RDS(on) (Max.) 0.620W ID 7A (3) PD 40W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead

isc N-Channel MOSFET Transistor R6007ENX FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 620m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

R6007JNJ Datasheet Nch 600V 7A Power MOSFET lOutline l LPT(S) VDSS 600V RDS(on)(Max.) 0.780 ID 7A PD 96W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPack

R6007JND3 Datasheet Nch 600V 7A Power MOSFET lOutline l TO-252 VDSS 600V RDS(on)(Max.) 0.780 ID 7A PD 96W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPac

R6007JNX Datasheet Nch 600V 7A Power MOSFET lOutline l TO-220FM VDSS 600V RDS(on)(Max.) 0.780 ID 7A PD 46W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPa

R6007MNJ Datasheet Nch 600V 7A Power MOSFET lOutline l TO-263S VDSS 600V SC-83 RDS(on)(Max.) 0.730 LPT(S) ID 7A PD 94W lInner circuit l lFeatures l 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple.

R6007KNX Datasheet Nch 600V 7A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.62 TO-220FM ID 7A PD 46W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Bulk Reel size (mm) - lAppl

R6007KNJ Datasheet Nch 600V 7A Power MOSFET lOutline l TO-263S VDSS 600V SC-83 RDS(on)(Max.) 0.62 LPT(S) ID 7A PD 78W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Embossed Packing T

isc N-Channel MOSFET Transistor R6007MNJ FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 730m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

isc N-Channel MOSFET Transistor R6007JNJ FEATURES Drain Current I =7A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 780m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

isc N-Channel MOSFET Transistor R6007KNX FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 620m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

isc N-Channel MOSFET Transistor R6007JND3 FEATURES Drain Current I =7A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 780m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

isc N-Channel MOSFET Transistor R6007KNJ FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 620m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

isc N-Channel MOSFET Transistor R6007JNX FEATURES Drain Current I =7A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 780m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose