R6015FNJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: R6015FNJ
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 50 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 15 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 42 nC
Время нарастания (tr): 45 ns
Выходная емкость (Cd): 1110 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.35 Ohm
Тип корпуса: LPTS
R6015FNJ Datasheet (PDF)
r6015fnj.pdf
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R6015FNJDatasheetNch 600V 15A Power MOSFETlOutlinel LPT(S)VDSS 600VRDS(on)(Max.) 0.35 ID 15A PD 50W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed to
r6015fnx.pdf
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Data Sheet10V Drive Nch MOSFET R6015FNX Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1) Fast reverse recovery time (trr) 1.21.32) Low on-resistance.0.83) Fast switching speed.2.54 2.54 0.75 2.64) Gate-source voltage(1) (2) (3) VGSS garanteed to be 30V .5) Drive circuits can be simple.6) Parallel us
r6015anz.pdf
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Data Sheet10V Drive Nch MOSFET R6015ANZ Structure Dimensions (Unit : mm)Silicon N-channel MOSFET 5.5TO-3PF3.015.53.6Features1) Low on-resistance.2) Low input capacitance.2.02.03.03) High ESD.0.75(1) (2) (3)(1) Gate 0.9 Application (2) Drain 5.45 5.45(3) SourceSwitching Packaging specifications Inner circuitPackage BulkTypeC
r6015knz.pdf
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R6015KNZDatasheetNch 600V 15A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.29 TO-3PFID15APD 60W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lAppl
r6015enx.pdf
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R6015ENX Nch 600V 15A Power MOSFET Data SheetlOutlineVDSS600V TO-220FMRDS(on) (Max.)0.290WID15A(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea
r6015anj.pdf
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10V Drive Nch MOSFET R6015ANJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS10.14.5 1.3 Features 1) Low on-resistance. 2) Fast switching speed. 1.243) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 2.54 0.40.782.75.085) Parallel use is easy. (1) Gate(1) (2) (3)(2) Drain(3) SourceEach lead has same
r6015anx.pdf
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R6015ANXNch 600V 15A Power MOSFET DatasheetOutlineVDSS600V TO-220FMRDS(on) (Max.)0.3ID15APD(1)(2)(3) 50WFeatures Inner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple.*1 Body Diode 5) Parallel use is easy.6) Pb-free lead
r6015enz.pdf
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R6015ENZ Nch 600V 15A Power MOSFET Data SheetlOutlineVDSS600V TO-3PFRDS(on) (Max.)0.290WID15A(1) (2) PD120W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead
r6015enj.pdf
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R6015ENJ Nch 600V 15A Power MOSFET Data SheetlOutline(2) VDSS600VLPT(S)(SC-83)RDS(on) (Max.)0.290WID15A(1) PD40W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-
r6015knz.pdf
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isc N-Channel MOSFET Transistor R6015KNZFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 290m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6015knj.pdf
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isc N-Channel MOSFET Transistor R6015KNJFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 290m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6015enx.pdf
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isc N-Channel MOSFET Transistor R6015ENXFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 290m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6015enz.pdf
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isc N-Channel MOSFET Transistor R6015ENZFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 290m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6015enj.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc N-Channel MOSFET Transistor R6015ENJFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 290m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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![R6015FNJ](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
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