R6030ENX - описание и поиск аналогов

R6030ENX Nch 600V 30A Power MOSFET Data Sheet lOutline VDSS 600V TO-220FM RDS(on) (Max.) 0.130W ID 30A (3) PD 40W (1) (2) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 20V. (3) Source 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lea

isc N-Channel MOSFET Transistor R6030ENX FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

R6030ENZ1 Nch 600V 30A Power MOSFET Data Sheet lOutline VDSS 600V TO-247 RDS(on) (Max.) 0.130W ID 30A (3) PD 120W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lea

R6030ENZ Nch 600V 30A Power MOSFET Data Sheet lOutline VDSS 600V TO-3PF RDS(on) (Max.) 0.130W ID 30A (1) (2) PD 120W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead

isc N-Channel MOSFET Transistor R6030ENZ1 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

isc N-Channel MOSFET Transistor R6030ENZ FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo