RFD8P06ESM - описание и поиск аналогов

 ..1. Size:306K  cn vbsemi
 rfd8p06esm.pdf 

RFD8P06ESM www.VBsemi.com P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter S

 6.1. Size:134K  fairchild semi
 rfd8p06e-sm rfp8p06e.pdf 

RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet January 2002 8A, 60V, 0.300 Ohm, P-Channel Power Features MOSFETs 8A, 60V These are P-Channel power MOSFETs manufactured using rDS(ON) = 0.300 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, r

 7.1. Size:106K  intersil
 rfd8p06le-sm rfp8p06le.pdf 

RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet July 1999 File Number 4273.1 8A, 60V, 0.300 Ohm, ESD Rated, Logic Features Level, P-Channel Power MOSFET 8A, 60V These products are P-Channel power MOSFETs rDS(ON) = 0.300 manufactured using the MegaFET process. This process, 2kV ESD Protected which uses feature sizes approaching those of LSI circuits, gives optimum utilizati

 8.1. Size:57K  intersil
 rfd8p05-sm rfp8p05.pdf 

RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 File Number 2384.2 8A, 50V, 0.300 Ohm, P-Channel Power Features MOSFETs 8A, 50V These products are P-Channel power MOSFETs rDS(ON) = 0.300 manufactured using the MegaFET process. This process, UIS SOA Rating Curve which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting i