RFD8P06ESM - аналоги, даташиты, параметры транзистора

RFD8P06ESM Datasheet (PDF)

..1. Size:306K cn vbsemi
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RFD8P06ESMwww.VBsemi.comP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter S

6.1. Size:134K fairchild semi
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RFD8P06E, RFD8P06ESM, RFP8P06EData Sheet January 20028A, 60V, 0.300 Ohm, P-Channel Power FeaturesMOSFETs 8A, 60VThese are P-Channel power MOSFETs manufactured using rDS(ON) = 0.300the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits gives optimum utilization of silicon, r

7.1. Size:106K intersil
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RFD8P06LE, RFD8P06LESM, RFP8P06LEData Sheet July 1999 File Number 4273.18A, 60V, 0.300 Ohm, ESD Rated, Logic FeaturesLevel, P-Channel Power MOSFET 8A, 60VThese products are P-Channel power MOSFETs rDS(ON) = 0.300manufactured using the MegaFET process. This process, 2kV ESD Protectedwhich uses feature sizes approaching those of LSI circuits,gives optimum utilizati

8.1. Size:57K intersil
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RFD8P05, RFD8P05SM, RFP8P05Data Sheet July 1999 File Number 2384.28A, 50V, 0.300 Ohm, P-Channel Power FeaturesMOSFETs 8A, 50VThese products are P-Channel power MOSFETs rDS(ON) = 0.300manufactured using the MegaFET process. This process, UIS SOA Rating Curvewhich uses feature sizes approaching those of LSI circuits,gives optimum utilization of silicon, resulting i

Другие MOSFET... RFD3N08LSM , RFD4N06L , RFD4N06LSM , RFD7N10LE , RFD7N10LESM , RFD8P05 , RFD8P05SM , RFD8P06E , P55NF06 , RFD8P06LE , RFD8P06LESM , RFF60P06 , RFF70N06 , RFG30P05 , RFG30P06 , RFG40N10 , RFG40N10LE .