2SK2321 - описание и поиск аналогов

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK2329(L), 2SK2329(S) Silicon N Channel MOS FET REJ03G1008-0200 (Previous ADE-208-1356) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline RENESAS Package co

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Power F-MOS FETs 2SK2327 2SK2327 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 15.5 0.5 3.0 0.3 3.2 0.1 High-speed switching 5 5 Low ON-resistance No secondary breakdown 5 5 4.0 Applications 5 2.0 0.2 1.1 0.1 Non-contact relay 0.7 0.1 Solenoid drive 5.45 0.3 5.45 0.3 Motor drive 5 Control equipmen

Power F-MOS FETs 2SK758 2SK2323(Tentative) Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive 5.08 0.4 Cont

Power F-MOS FETs 2SK2325 2SK2325 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive 5.08 0.4 Control equipm

Power F-MOS FETs 2SK758 2SK2324(Tentative) Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive 5.08 0.4 Cont

Power F-MOS FETs 2SK2326 2SK2326 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive 5.08 0.4 Control equipm

2SK2329 L , 2SK2329 S Silicon N Channel MOS FET Application DPAK-2 High speed power switching 4 4 Features 12 3 Low on resistance High speed switching 2, 4 12 Low drive current 3 2.5 V gate drive device can be driven from 1 3 V source 1. Gate Suitable for Switching regulator, DC DC 2. Drain converter 3. Source 4. Drain 3 Table 1 Absolute Maxim

isc N-Channel MOSFET Transistor 2SK2328 DESCRIPTION Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltag

isc N-Channel MOSFET Transistor 2SK2326 FEATURES Drain-source on-resistance RDS(on) 1.5 @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High fast switching Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V