2SK2403 - описание и поиск аналогов

Ordering number EN8602 2SK2403 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK2403 Applications Features Built-in FRD. 10V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 450 V Gate-to-Source Voltage VGSS 30 V Drain Current (DC) ID 3 A Drain

2SK2400 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2400 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 17 (typ.) DS (ON) High forward transfer admittance Y = 4.5 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhanceme

2SK2401 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2401 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.13 (typ.) High forward transfer admittance Yfs = 17 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 200 V) Enhancement-mode Vth = 1.5 3.5 V (VDS =

Ordering number ENN5251 N-Channel Silicon MOSFET 2SK2406 Ultrahigh-Speed Switching, Motor Driver Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2083B High-speed diode. [2SK2406] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SK2406]

2SK2408 Silicon N Channel MOS FET REJ03G1011-0300 (Previous ADE-208-1358) Rev.3.00 Apr 27, 2006 Application High speed power switching Features Low on-resistance Built-in fast recovery diode (trr = 120 ns typ) High speed switching Low drive current Suitable for switching regulator, motor control Outline RENESAS Package code PRSS0004AC-A (Pack

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2402 DESCRIPTION Drain Current ID= 3.5A@ TC=25 Drain Source Voltage- VDSS= 600V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage 30 V

isc N-Channel MOSFET Transistor 2SK2408 DESCRIPTION Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr

isc N-Channel MOSFET Transistor 2SK2401 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V D

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2407 DESCRIPTION Drain Current ID= 10A@ TC=25 Drain Source Voltage- VDSS= 450V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage 30 V