2SK2532 - описание и поиск аналогов

Ordering number EN5457 2SK2532 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK2532 Applications Features Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package. Specifications Absolute Maximum Ratings at Ta=25 C

Ordering number EN8611 2SK2533 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2533 General-Purpose Switching Device Applications Features Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package. High-speed switching. Specifications Absolute Max

Ordering number EN8612 2SK2534 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2534 General-Purpose Switching Device Applications Features Low ON-resistance. High-speed switching. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package. Specifications Absolute Maximum Ratings at Ta=25

Ordering number ENN6406 N-Channel Silicon MOSFET 2SK2530 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2083B Low voltage drive. [2SK2530] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP 2092B [2SK2530] 6.5 2.3 5.0 0.5 4 0.

Ordering number EN8609 2SK2531 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK2531 Applications Features Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package. Specifications Absolute Maximum Ratings at Ta=25 C

Ordering number ENN5075 N-Channel Junction Silicon FET 2SK2539 High-Frequency Amplifier, Analog Switch Applications Features Package Dimensions Large yfs . unit mm Small Ciss. 2050A Small-sized package permitting 2SK2539-applied [2SK2539] sets to be made small and slim. Adoption of FBET process. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 2.9 1 Source 2 Dr

Power F-MOS FETs 2SK2538 2SK2538 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Avalanche energy capability guaranteed 5.5 0.2 2.7 0.2 High-speed switching No secondary breakdown 3.1 0.1 Applications High-speed switching (switching mode regulator) 1.3 0.2 For high-frequency power amplification 1.4 0.1 +0.2 0.5 -0.1 0.8 0.1 Absolute Maxi