Справочник MOSFET. SKI03036

 

SKI03036 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SKI03036
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 90 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.5 V
   Максимально допустимый постоянный ток стока |Id|: 80 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 36.1 nC
   Время нарастания (tr): 6.4 ns
   Выходная емкость (Cd): 590 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0039 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для SKI03036

 

 

SKI03036 Datasheet (PDF)

 ..1. Size:235K  sanken-ele
 ski03036.pdf

SKI03036 SKI03036

30 V, 80 A, 3.2 m Low RDS(ON) N ch Trench Power MOSFET SKI03036 Features Package TO-263 V(BR)DSS --------------------------------- 30 V (ID = 100 A) ID ---------------------------------------------------------- 80 A (4) D RDS(ON) ---------- 3.9 m max. (VGS = 10 V, ID = 57.0 A) Qg ------16.5 nC (VGS = 4.5 V, VDS = 15 V, ID = 57.0 A) Low Total Gate

 ..2. Size:255K  inchange semiconductor
 ski03036.pdf

SKI03036 SKI03036

isc N-Channel MOSFET Transistor SKI03036FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 8.1. Size:235K  sanken-ele
 ski03087.pdf

SKI03036 SKI03036

30 V, 40 A, 7.6 m Low RDS(ON) N ch Trench Power MOSFET SKI03087 Features Package TO-263 V(BR)DSS --------------------------------- 30 V (ID = 100 A) ID ---------------------------------------------------------- 40 A (4) D RDS(ON) ---------- 9.4 m max. (VGS = 10 V, ID = 31.5 A) Qg ------- 7.1 nC (VGS = 4.5 V, VDS = 15 V, ID = 31.5 A) Low Total Gat

 8.2. Size:235K  sanken-ele
 ski03021.pdf

SKI03036 SKI03036

30 V, 85 A, 2.1 m Low RDS(ON) N ch Trench Power MOSFET SKI03021 Features Package TO-263 V(BR)DSS --------------------------------- 30 V (ID = 100 A) ID ---------------------------------------------------------- 85 A (4) D RDS(ON) ----------- 2.6 m max. (VGS = 10 V, ID = 110A) Qg ------ 42.3 nC (VGS = 4.5 V, VDS = 15 V, ID = 110 A) Low Total Gate

 8.3. Size:235K  sanken-ele
 ski03063.pdf

SKI03036 SKI03036

30 V, 40 A, 5.5 m Low RDS(ON) N ch Trench Power MOSFET SKI03063 Features Package TO-263 V(BR)DSS --------------------------------- 30 V (ID = 100 A) ID ---------------------------------------------------------- 40 A (4) D RDS(ON) ---------- 6.8 m max. (VGS = 10 V, ID = 39.5 A) Qg ------- 9.3 nC (VGS = 4.5 V, VDS = 15 V, ID = 39.5 A) Low Total Gat

 8.4. Size:258K  inchange semiconductor
 ski03021.pdf

SKI03036 SKI03036

Isc N-Channel MOSFET Transistor SKI03021FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 8.5. Size:255K  inchange semiconductor
 ski03063.pdf

SKI03036 SKI03036

isc N-Channel MOSFET Transistor SKI03063FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 6.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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