Справочник MOSFET. SKI06073

 

SKI06073 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SKI06073
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 116 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 78 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 7.4 ns
   Cossⓘ - Выходная емкость: 420 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0066 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для SKI06073

 

 

SKI06073 Datasheet (PDF)

 ..1. Size:235K  sanken-ele
 ski06073.pdf

SKI06073 SKI06073

60 V, 78 A, 5.1 m Low RDS(ON) N ch Trench Power MOSFET SKI06073 Features Package TO-263 V(BR)DSS --------------------------------- 60 V (ID = 100 A) ID ---------------------------------------------------------- 78 A (4) D RDS(ON) ---------- 6.6 m max. (VGS = 10 V, ID = 39.0 A) Qg ------26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39.0 A) Low Total Gate

 ..2. Size:255K  inchange semiconductor
 ski06073.pdf

SKI06073 SKI06073

isc N-Channel MOSFET Transistor SKI06073FEATURESDrain Current I = 78A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 8.1. Size:235K  sanken-ele
 ski06048.pdf

SKI06073 SKI06073

60 V, 85 A, 3.9 m Low RDS(ON) N ch Trench Power MOSFET SKI06048 Features Package TO-263 V(BR)DSS --------------------------------- 60 V (ID = 100 A) ID ---------------------------------------------------------- 85 A (4) D RDS(ON) ---------- 4.9 m max. (VGS = 10 V, ID = 55.0 A) Qg ------44.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 55.0 A) Low Total Gate

 8.2. Size:256K  inchange semiconductor
 ski06048.pdf

SKI06073 SKI06073

isc N-Channel MOSFET Transistor SKI06048FEATURESDrain Current I = 85A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 4.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.1. Size:235K  sanken-ele
 ski06106.pdf

SKI06073 SKI06073

60 V, 57 A, 7.0 m Low RDS(ON) N ch Trench Power MOSFET SKI06106 Features Package TO-263 V(BR)DSS --------------------------------- 60 V (ID = 100 A) ID ---------------------------------------------------------- 57 A (4) D RDS(ON) ---------- 9.2 m max. (VGS = 10 V, ID = 28.5 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A) Low Total Gate

 9.2. Size:255K  inchange semiconductor
 ski06106.pdf

SKI06073 SKI06073

isc N-Channel MOSFET Transistor SKI06106FEATURESDrain Current I = 57A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 9.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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