SKI07171 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SKI07171
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 90 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 46 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 4.2 ns
Cossⓘ - Выходная емкость: 245 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0141 Ohm
Тип корпуса: TO-263
SKI07171 Datasheet (PDF)
ski07171.pdf
75 V, 46 A, 10.4 m Low RDS(ON) N ch Trench Power MOSFET SKI07171 Features Package TO-263 V(BR)DSS --------------------------------- 75 V (ID = 100 A) ID ---------------------------------------------------------- 46 A (4) D RDS(ON) -------- 14.1 m max. (VGS = 10 V, ID = 22.8 A) Qg ------15.0 nC (VGS = 4.5 V, VDS = 38 V, ID = 22.8 A) Low Total Gate
ski07171.pdf
isc N-Channel MOSFET Transistor SKI07171FEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 14.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
ski07114.pdf
75 V, 62 A, 7.2 m Low RDS(ON) N ch Trench Power MOSFET SKI07114 Features Package TO-263 V(BR)DSS --------------------------------- 75 V (ID = 100 A) ID ---------------------------------------------------------- 62 A (4) D RDS(ON) ---------- 9.7 m max. (VGS = 10 V, ID = 31.2 A) Qg ------ 25.0nC (VGS = 4.5 V, VDS = 38 V, ID = 31.2 A) Low Total Gate
ski07114.pdf
isc N-Channel MOSFET Transistor SKI07114FEATURESDrain Current I = 62A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
ski07074.pdf
75 V, 85 A, 5.3 m Low RDS(ON) N ch Trench Power MOSFET SKI07074 Features Package TO-263 V(BR)DSS --------------------------------- 75 V (ID = 100 A) ID ---------------------------------------------------------- 85 A (4) D RDS(ON) ---------- 6.9 m max. (VGS = 10 V, ID = 44.0 A) Qg ------42.9 nC (VGS = 4.5 V, VDS = 38 V, ID = 44.0 A) Low Total Gate
ski07074.pdf
isc N-Channel MOSFET Transistor SKI07074FEATURESDrain Current I = 85A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 6.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918