SKI10123 - аналоги, параметры транзистора - Справочник транзисторов

SKI10123 даташит

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100 V, 66 A, 8.8 m Low RDS(ON) N ch Trench Power MOSFET SKI10123 Features Package TO-263 V(BR)DSS -------------------------------- 100 V (ID = 100 A) ID ---------------------------------------------------------- 66 A (4) D RDS(ON) -------- 12.1 m max. (VGS = 10 V, ID = 33.0 A) Qg ------45.2 nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A) Low Total Gate

..2. Size:254K inchange semiconductor
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isc N-Channel MOSFET Transistor SKI10123 FEATURES Drain Current I = 66A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 12.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

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100 V, 47 A, 13.2 m Low RDS(ON) N ch Trench Power MOSFET SKI10195 Features Package TO-263 V(BR)DSS -------------------------------- 100 V (ID = 100 A) ID ---------------------------------------------------------- 47 A (4) D RDS(ON) -------- 18.4 m max. (VGS = 10 V, ID = 23.4 A) Qg ------27.1 nC (VGS = 4.5 V, VDS = 50 V, ID = 23.4 A) Low Total Gat

8.2. Size:255K inchange semiconductor
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isc N-Channel MOSFET Transistor SKI10195 FEATURES Drain Current I = 47A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 18.4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur