RFG50N06, RFP50N06, RF1S50N06SMData Sheet January 200250A, 60V, 0.022 Ohm, N-Channel Power FeaturesMOSFETs 50A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits gives optimum utilization of silico

RFG50N06LE, RFP50N06LE, RF1S50N06LESMData Sheet October 1999 File Number 4072.350A, 60V, 0.022 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 50A, 60VThese N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.022manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesapproa

RFG50N05L, RFP50N05LData Sheet July 1999 File Number 2424.350A, 50V, 0.022 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 50A, 50VThese are logic-level N-channel power MOSFETs rDS(ON) = 0.022manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse)which uses feature sizes approaching those of LSIintegrated circuits gives optimum