Справочник MOSFET. NCE65T130F

 

NCE65T130F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE65T130F
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 35 W
   Предельно допустимое напряжение сток-исток |Uds|: 650 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 28 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 37.5 nC
   Время нарастания (tr): 12 ns
   Выходная емкость (Cd): 120 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.13 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для NCE65T130F

 

 

NCE65T130F Datasheet (PDF)

 ..1. Size:616K  ncepower
nce65t130d nce65t130 nce65t130f.pdf

NCE65T130F
NCE65T130F

NCE65T130D,NCE65T130,NCE65T130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..2. Size:616K  ncepower
nce65t130 nce65t130f.pdf

NCE65T130F
NCE65T130F

NCE65T130D,NCE65T130,NCE65T130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.1. Size:469K  ncepower
nce65t130t.pdf

NCE65T130F
NCE65T130F

NCE65T130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app

 7.1. Size:622K  ncepower
nce65t180d nce65t180 nce65t180f.pdf

NCE65T130F
NCE65T130F

NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, an

 7.2. Size:599K  ncepower
nce65t1k2 nce65t1k2d nce65t1k2f.pdf

NCE65T130F
NCE65T130F

NCE65T1K2,NCE65T1K2D,NCE65T1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 7.3. Size:1722K  ncepower
nce65t180f nce65t180 nce65t180d.pdf

NCE65T130F
NCE65T130F

NCE65T180D,NCE65T180,NCE65T180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 190 mDS(ON) MAXwith low gate charge. This super junction MOSFET fits theI 21 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indus

 7.4. Size:494K  ncepower
nce65t180v.pdf

NCE65T130F
NCE65T130F

NCE65T180V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 199 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap

 7.5. Size:476K  ncepower
nce65t1k2k nce65t1k2i.pdf

NCE65T130F
NCE65T130F

NCE65T1K2K,NCE65T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria

 7.6. Size:481K  ncepower
nce65t1k9i nce65t1k9k.pdf

NCE65T130F
NCE65T130F

NCE65T1K9K,NCE65T1K9I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 3 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 7.7. Size:476K  ncepower
nce65t1k2i nce65t1k2k.pdf

NCE65T130F
NCE65T130F

NCE65T1K2K,NCE65T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria

 7.8. Size:599K  ncepower
nce65t1k2f.pdf

NCE65T130F
NCE65T130F

NCE65T1K2,NCE65T1K2D,NCE65T1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 7.9. Size:404K  ncepower
nce65t180t.pdf

NCE65T130F
NCE65T130F

NCE65T180T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap

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