UPA1727G - описание и поиск аналогов

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1727 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1727 is N-Channel MOS Field Effect Transistor designed for high current switching applications. 85 1, 2, 3 ; Source 4 ; Gate FEATURES 5, 6, 7, 8 ; Drain Single chip type Low on-state resistance RDS(on)1 = 14 m TYP. (VGS = 10 V

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1728 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1728 is N-Channel MOS Field Effect Transistor designed for high current switching applications. 8 5 1, 2, 3 ; Source 4 ; Gate FEATURES 5, 6, 7, 8 ; Drain Single chip type Low on-state resistance RDS(on)1 = 19 m TYP. (VGS = 10