Справочник MOSFET. UPA1819GR

 

UPA1819GR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: UPA1819GR
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 690 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
   Тип корпуса: TSSOP-8

 Аналог (замена) для UPA1819GR

 

 

UPA1819GR Datasheet (PDF)

 ..1. Size:72K  nec
 upa1819gr.pdf

UPA1819GR UPA1819GR

DATA SHEETMOS FIELD EFFECT TRANSISTORPA1819P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1819 is a switching device that can be driven85directly by a 4.0 V power source. This device features a low on-state resistance and1 : Drain11, 2, 3: Sourceexcellent switching characteristics, and is suitable for1.2

 8.1. Size:202K  renesas
 upa1818gr.pdf

UPA1819GR UPA1819GR

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:192K  renesas
 upa1815gr.pdf

UPA1819GR UPA1819GR

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:62K  nec
 upa1814gr.pdf

UPA1819GR UPA1819GR

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1814P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1814 is a switching device which can be85driven directly by a 4 V power source. The PA1814 features a low on-state resistance and1, 5, 8 : Drainexcellent switching characteristics, and is suitable for1.2 MAX.2, 3,

 8.4. Size:73K  nec
 upa1816gr.pdf

UPA1819GR UPA1819GR

DATA SHEETMOS FIELD EFFECT TRANSISTORPA1816P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1816 is a switching device which can be85driven directly by a 1.8 V power source. This device features a low on-state resistance and1, 2, 3 : Sourceexcellent switching characteristics, and is suitable for1.2 MAX.4 : G

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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