UPA1856GR Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: UPA1856GR
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 528 ns
Cossⓘ - Выходная емкость: 208 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
Тип корпуса: TSSOP-8
- подбор MOSFET транзистора по параметрам
UPA1856GR Datasheet (PDF)
upa1856gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1857gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1855gr.pdf

UPA1855GR-9JG PCB24DATA SHEETMOS FIELD EFFECT TRANSISTORPA1855N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTIONPACKAGE DRAWING (Unit : mm) The PA1855 is a switching device which can bedriven directly by a 2.5 V power source. 85 The PA1855 features a low on-state resistance and1
upa1858gr.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1858 P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1858 is a switching device, which can be85driven directly by a 2.5 V power source. This device features a low on-state resistance and1 : Drain1excellent switching characteristics, and is suitable for1.2 MAX.2, 3 : S
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK3457 | NCEP026N10F | NTTD4401FR2 | SI7913DN | JCS5N50CT | MC11N005 | NVMFS5C628N
History: 2SK3457 | NCEP026N10F | NTTD4401FR2 | SI7913DN | JCS5N50CT | MC11N005 | NVMFS5C628N



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
bd136 | tl431 datasheet | 2sd526 | 2n4403 transistor equivalent | 2sc1318 | 2n3055 transistor equivalent | 2sc1740 | c3229