DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1858 P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1858 is a switching device, which can be85driven directly by a 2.5 V power source. This device features a low on-state resistance and1 : Drain1excellent switching characteristics, and is suitable for1.2 MAX.2, 3 : S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

UPA1855GR-9JG PCB24DATA SHEETMOS FIELD EFFECT TRANSISTORPA1855N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTIONPACKAGE DRAWING (Unit : mm) The PA1855 is a switching device which can bedriven directly by a 2.5 V power source. 85 The PA1855 features a low on-state resistance and1