Справочник MOSFET. UPA1858GR

 

UPA1858GR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: UPA1858GR
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 12 nC
   trⓘ - Время нарастания: 65 ns
   Cossⓘ - Выходная емкость: 300 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0245 Ohm
   Тип корпуса: TSSOP-8

 Аналог (замена) для UPA1858GR

 

 

UPA1858GR Datasheet (PDF)

 ..1. Size:72K  nec
 upa1858gr.pdf

UPA1858GR UPA1858GR

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1858 P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1858 is a switching device, which can be85driven directly by a 2.5 V power source. This device features a low on-state resistance and1 : Drain1excellent switching characteristics, and is suitable for1.2 MAX.2, 3 : S

 8.1. Size:200K  renesas
 upa1856gr.pdf

UPA1858GR UPA1858GR

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:201K  renesas
 upa1857gr.pdf

UPA1858GR UPA1858GR

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:181K  nec
 upa1855gr.pdf

UPA1858GR UPA1858GR

UPA1855GR-9JG PCB24DATA SHEETMOS FIELD EFFECT TRANSISTORPA1855N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTIONPACKAGE DRAWING (Unit : mm) The PA1855 is a switching device which can bedriven directly by a 2.5 V power source. 85 The PA1855 features a low on-state resistance and1

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top