UPA1870BGR Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: UPA1870BGR
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 245 ns
Cossⓘ - Выходная емкость: 166 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
Тип корпуса: TSSOP-8
- подбор MOSFET транзистора по параметрам
UPA1870BGR Datasheet (PDF)
upa1870bgr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1870bgr.pdf

UPA1870BGRwww.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.013 at VGS = 4.5 V Available7.620RoHS*0.020 at VGS = 2.5 V 6.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RATINGS TA =
upa1870gr.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTORPA1870N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1870 is a switching device which can be85driven directly by a 2.5-V power source. The PA1870 features a low on-state resistance and1 :Drain1excellent switching characteristics, and is suitable for1.2 MAX.2, 3 :Sourc
upa1871gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SIHFR420 | CHM4955JGP | IRFE210 | STD10NF06 | FL6L5201 | SPP20N65C3 | CHM6060RPAGP
History: SIHFR420 | CHM4955JGP | IRFE210 | STD10NF06 | FL6L5201 | SPP20N65C3 | CHM6060RPAGP



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
2n4403 transistor equivalent | 2sc1318 | 2n3055 transistor equivalent | 2sc1740 | c3229 | c2078 transistor | 2sc458 transistors | 2sa992