Справочник MOSFET. UPA1911A

 

UPA1911A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: UPA1911A
   Маркировка: TK
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 2.3 nC
   trⓘ - Время нарастания: 230 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.115 Ohm
   Тип корпуса: SC-95

 Аналог (замена) для UPA1911A

 

 

UPA1911A Datasheet (PDF)

 ..1. Size:378K  nec
upa1911a.pdf

UPA1911A
UPA1911A

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1911AP-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1911A is a switching device which can be driven+0.10.32 0.05directly by a 2.5 V power source.0.16+0.10.06 The PA1911A features a low on-state resistance and excellentswitching characteristics, and is suita

 8.1. Size:236K  renesas
upa1919.pdf

UPA1911A
UPA1911A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:187K  renesas
upa1912.pdf

UPA1911A
UPA1911A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:200K  renesas
upa1917.pdf

UPA1911A
UPA1911A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:63K  nec
upa1914.pdf

UPA1911A
UPA1911A

DATA SHEETMOS FIELD EFFECT TRANSISTORPA1914P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1914 is a switching device which can be driven+0.10.32 0.05directly by a 4 V power source. 0.16+0.10.06 The PA1914 features a low on-state resistance and excellentswitching characteristics, and is suitable for applications

 8.5. Size:70K  nec
upa1913.pdf

UPA1911A
UPA1911A

DATA SHEETMOS FIELD EFFECT TRANSISTORPA1913 P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1913 is a switching device which can be driven+0.10.32 0.05directly by a 2.5-V power source. 0.16+0.10.06 The PA1913 features a low on-state resistance and excellentswitching characteristics, and is suitable

 8.6. Size:58K  nec
upa1916.pdf

UPA1911A
UPA1911A

DATA SHEETMOS FIELD EFFECT TRANSISTORPA1916P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1916 is a switching device which can be driven+0.10.32 0.05directly by a 1.8 V power source.0.16+0.10.06 This device features a low on-state resistance and excellentswitching characteristics, and is suitable for

 8.7. Size:65K  nec
upa1915.pdf

UPA1911A
UPA1911A

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1915P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1915 is a switching device which can be driven+0.10.32 0.05directly by a 2.5-V power source. 0.16+0.10.06 The PA1915 features a low on-state resistance and excellentswitching characteristics, and is suitable f

 8.8. Size:68K  nec
upa1918.pdf

UPA1911A
UPA1911A

DATA SHEETMOS FIELD EFFECT TRANSISTORPA1918P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTIONPACKAGE DRAWING (Unit: mm) The PA1918 is a switching device, which can be driven+0.1directly by a 4.0 V power source. 0.32 0.050.16+0.10.06 This device features a low on-state resistance and excellentswitching characteristics, and is suitable fo

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