DATA SHEETMOS FIELD EFFECT TRANSISTORPA1913 P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1913 is a switching device which can be driven+0.10.32 0.05directly by a 2.5-V power source. 0.16+0.10.06 The PA1913 features a low on-state resistance and excellentswitching characteristics, and is suitable

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTORPA1914P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1914 is a switching device which can be driven+0.10.32 0.05directly by a 4 V power source. 0.16+0.10.06 The PA1914 features a low on-state resistance and excellentswitching characteristics, and is suitable for applications

DATA SHEETMOS FIELD EFFECT TRANSISTORPA1916P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1916 is a switching device which can be driven+0.10.32 0.05directly by a 1.8 V power source.0.16+0.10.06 This device features a low on-state resistance and excellentswitching characteristics, and is suitable for

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1911AP-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1911A is a switching device which can be driven+0.10.32 0.05directly by a 2.5 V power source.0.16+0.10.06 The PA1911A features a low on-state resistance and excellentswitching characteristics, and is suita

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1915P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1915 is a switching device which can be driven+0.10.32 0.05directly by a 2.5-V power source. 0.16+0.10.06 The PA1915 features a low on-state resistance and excellentswitching characteristics, and is suitable f

DATA SHEETMOS FIELD EFFECT TRANSISTORPA1918P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTIONPACKAGE DRAWING (Unit: mm) The PA1918 is a switching device, which can be driven+0.1directly by a 4.0 V power source. 0.32 0.050.16+0.10.06 This device features a low on-state resistance and excellentswitching characteristics, and is suitable fo