UPA2462T1Q MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: UPA2462T1Q
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 24 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 7 nC
trⓘ - Время нарастания: 6000 ns
Cossⓘ - Выходная емкость: 91 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0215 Ohm
Тип корпуса: 8-HUSON
Аналог (замена) для UPA2462T1Q
UPA2462T1Q Datasheet (PDF)
upa2462t1q.pdf
Preliminary Data Sheet R07DS0187EJ0100 PA2462T1Q Rev.1.00Dec 06, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2462T1Q is a switching device, which can be driven directly by a 2.5 V power source. The PA2462T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o
upa2463t1q.pdf
Preliminary Data Sheet R07DS0188EJ0100 PA2463T1Q Rev.1.00Dec 06, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2463T1Q is a switching device, which can be driven directly by a 2.5 V power source. The PA2463T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o
upa2465t1q.pdf
Preliminary Data Sheet R07DS0190EJ0100 PA2465T1Q Rev.1.00Dec 06, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2465T1Q is a switching device, which can be driven directly by a 2.5 V power source. The PA2465T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o
upa2464t1q.pdf
Preliminary Data Sheet R07DS0189EJ0100 PA2464T1Q Rev.1.00Dec 06, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2464T1Q is a switching device, which can be driven directly by a 2.5 V power source. The PA2464T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F