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UPA2592T1H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: UPA2592T1H

Тип транзистора: MOSFET

Полярность: NP

Максимальная рассеиваемая мощность (Pd): 1.5 W

Предельно допустимое напряжение сток-исток (Uds): 20 V

Предельно допустимое напряжение затвор-исток (Ugs): 12 V

Максимально допустимый постоянный ток стока (Id): 4 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 5.4 nC

Время нарастания (tr): 8 ns

Выходная емкость (Cd): 75 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.05 Ohm

Тип корпуса: 8-VSOF

Аналог (замена) для UPA2592T1H

 

 

UPA2592T1H Datasheet (PDF)

1.1. upa2592t1h.pdf Size:316K _update-mosfet

UPA2592T1H
UPA2592T1H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

1.2. upa2592t1h.pdf Size:316K _renesas

UPA2592T1H
UPA2592T1H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.1. upa2591t1h.pdf Size:316K _update-mosfet

UPA2592T1H
UPA2592T1H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. upa2590t1h.pdf Size:330K _update-mosfet

UPA2592T1H
UPA2592T1H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.3. upa2593t1h.pdf Size:290K _update-mosfet

UPA2592T1H
UPA2592T1H

 Preliminary Data Sheet R07DS0012EJ0200 µ PA2593 Rev.2.00 Sep 10, 2010 MOS FIELD EFFECT TRANSISTOR Description The µPA2593 is N- and P-channel MOSFETs designed for DC/DC converters and power management applications of  portable equipments. N- and P-channel MOSFETs are assembled in one package, to contribute minimize the equipments. Features • 4.5 V drive available

4.4. upa2591t1h.pdf Size:316K _renesas

UPA2592T1H
UPA2592T1H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.5. upa2590t1h.pdf Size:330K _renesas

UPA2592T1H
UPA2592T1H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.6. upa2593t1h.pdf Size:290K _renesas

UPA2592T1H
UPA2592T1H

 Preliminary Data Sheet R07DS0012EJ0200 µ PA2593 Rev.2.00 Sep 10, 2010 MOS FIELD EFFECT TRANSISTOR Description The µPA2593 is N- and P-channel MOSFETs designed for DC/DC converters and power management applications of  portable equipments. N- and P-channel MOSFETs are assembled in one package, to contribute minimize the equipments. Features • 4.5 V drive available

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