UPA2650T1E Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: UPA2650T1E
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.8 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 7.3 ns
Cossⓘ - Выходная емкость: 100 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
Тип корпуса: 6LD3X3MLP
- подбор MOSFET транзистора по параметрам
UPA2650T1E Datasheet (PDF)
upa2650t1e.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2680t1e.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2670t1r.pdf

Data SheetPA2670T1R R07DS0833EJ0101DUAL P-CHANNEL MOSFET Rev.1.01Apr 15, 201320 V, 3.0 A, 79 m Description The PA2670T1R is Dual P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o
upa2672t1r.pdf

Data SheetPA2672T1R R07DS0834EJ0101DUAL P-CHANNEL MOSFET Rev.1.0112 V, 4.0 A, 67 m Apr 15, 2013Description The PA2672T1R is Dual P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IRFR024 | IRF7831PBF | IRF5805TRPBF | STD18N65M5 | AM90N03-02D | RP1E125XN | APM4416
History: IRFR024 | IRF7831PBF | IRF5805TRPBF | STD18N65M5 | AM90N03-02D | RP1E125XN | APM4416



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