To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2723UT1ASWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit: mm) DESCRIPTION The PA2723UT1A is N-channel MOSFET designed for low side device of synchronous rectifier DC/DC converter. 182 7FEATURES 3 64 5 Low on-state resistance 6 0.2 0.10 S RDS(on)1 = 2.5 m MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 3.5 m

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2722UT1ASWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit: mm) DESCRIPTION The PA2722UT1A is N-channel MOSFET designed for DC/DC converter applications. 182 7FEATURES 3 6 Low on-state resistance 4 5 RDS(on)1 = 3.3 m MAX. (VGS = 10 V, ID = 15 A) 6 0.2 0.10 S RDS(on)2 = 4.6 m MAX. (VGS = 4.5 V, ID = 15

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2724UT1ASWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit: mm) DESCRIPTION The PA2724UT1A is N-channel MOSFET designed for DC/DC converter applications. 18FEATURES 2 7 Low on-state resistance 3 64 5 RDS(on)1 = 3.3 m MAX. (VGS = 10 V, ID = 15 A) 6 0.2 0.10 S RDS(on)2 = 5.0 m MAX. (VGS = 4.5 V, ID = 15 A)

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2725UT1ASWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit: mm) DESCRIPTION The PA2725UT1A is N-channel MOSFET designed for DC/DC converter applications. 18FEATURES 2 7 Low on-state resistance 3 64 5 RDS(on)1 = 5.0 m MAX. (VGS = 10 V, ID = 13 A) 6 0.2 0.10 S RDS(on)2 = 7.5 m MAX. (VGS = 4.5 V, ID = 13 A)

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2727T1ASWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit: mm) DESCRIPTION The PA2727T1A is N-channel MOSFET designed for DC/DC converter applications. 18FEATURES 2 7 Low on-state resistance 3 6 RDS(on)1 = 9.6 m MAX. (VGS = 10 V, ID = 8 A) 4 5 RDS(on)2 = 15 m MAX. (VGS = 4.5 V, ID = 8 A) 6 0.2 0.10 S

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2726UT1ASWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit: mm) DESCRIPTION The PA2726UT1A is N-channel MOSFET designed for DC/DC converter applications. 18FEATURES 2 7 Low on-state resistance 3 64 5 RDS(on)1 = 7.0 m MAX. (VGS = 10 V, ID = 10 A) 6 0.2 0.10 S RDS(on)2 = 11.0 m MAX. (VGS = 4.5 V, ID = 10 A