Справочник MOSFET. UPA2750GR

 

UPA2750GR Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: UPA2750GR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 390 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0155 Ohm
   Тип корпуса: SOP-8
     - подбор MOSFET транзистора по параметрам

 

UPA2750GR Datasheet (PDF)

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UPA2750GR

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:184K  nec
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UPA2750GR

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2757GRSWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The PA2757GR is Dual N-channel MOS Field Effect 8 5Transistors designed for switching application. 1 : Source 12 : Gate 17, 8 : Drain 1FEATURES 3 : Source 24 : Gate 2 Low on-state resistance 5, 6 : Drain 2RDS(on)1 = 36.0 m MAX. (VGS = 10

 8.2. Size:66K  nec
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UPA2750GR

DATA SHEETMOS FIELD EFFECT TRANSISTORPA2753GRSWITCHINGN-CHANNEL POWER MOS FETDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA2753GR is Dual N-Channel MOS Field Effect8 5Transistor designed for DC/DC converters and power1 ; Source 1management applications of notebook computers.2 ; Gate 17, 8 ; Drain 13 ; Source 2FEATURES4 ; Gate 2 Dual chip type 5,

 8.3. Size:143K  nec
upa2756gr.pdfpdf_icon

UPA2750GR

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2756GRSWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The PA2756GR is Dual N-channel MOS Field Effect Transistor designed for switching applications. 8 51 : Source 12 : Gate 1FEATURES 7, 8: Drain 13 : Source 2 Low on-state resistance 4 : Gate 2 RDS(on)1 = 105 m MAX. (VGS = 10 V, ID = 2.0

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: PHP83N03LT | STB10NK60ZT4 | NCEAP016N10LL | BUK455-100B | SI7413DN | FDG6320C | SSF65R420S2

 

 
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