UPA2815T1S - описание и поиск аналогов

Data Sheet PA2815T1S R07DS0777EJ0101 P-channel MOSFET Rev.1.01 May 28, 2013 30 V, 21 A, 11 m Description The PA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 11 m MAX. (VGS = -10 V, ID = -21 A

Data Sheet PA2812T1L R07DS0762EJ0101 P-channel MOSFEF Rev.1.01 May 28, 2013 30 V, 30 A, 4.8 m Description The PA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 4.8 m MAX. (VGS = -10 V, ID = -30

Preliminary Data Sheet R07DS0191EJ0100 PA2811T1L Rev.1.00 Jan 11, 2011 MOS FIELD EFFECT TRANSISTOR Description The PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS -30 V (TA = 25 C) Low on-state resistance RDS(on) = 15 m MAX. (VGS = -10 V, ID = -19 A)

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Data Sheet PA2814T1S R07DS0776EJ0101 P-channel MOSFET Rev.1.01 May 28, 2013 30 V, 24 A, 7.8 m Description The PA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 7.8 m MAX. (VGS = -10 V, ID = -24

Data Sheet PA2813T1L R07DS0763EJ0102 P-channel MOSFET Rev.1.02 May. 28, 2013 30 V, 27 A, 6.2 m Description The PA2813T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 6.2 m MAX. (VGS = -10 V, ID = -2

Data Sheet PA2816T1S R07DS0778EJ0101 P-channel MOSFET Rev.1.01 May 28, 2013 30 V, 17 A, 15.5 m Description The PA2816T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 15.5 m MAX. (VGS = -10 V, ID = -