EFC6612R-TF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: EFC6612R-TF
Маркировка: MM
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 23 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 27 nC
trⓘ - Время нарастания: 640 ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0051 Ohm
Тип корпуса: EFCP
Аналог (замена) для EFC6612R-TF
EFC6612R-TF Datasheet (PDF)
efc6612r-tf efc6612r.pdf
Ordering number : ENA2329A EFC6612R Power MOSFET http://onsemi.com 20V, 5.1m, 23A, Dual N-Channel Features 2.5V drive Common-drain type Protection diode in 2KV ESD HBM Halogen free compliance Applications Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Valu
efc6612r.pdf
Ordering number : ENA2329A EFC6612R Power MOSFET http://onsemi.com 20V, 5.1m, 23A, Dual N-Channel Features 2.5V drive Common-drain type Protection diode in 2KV ESD HBM Halogen free compliance Applications Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Valu
efc6611r-tf efc6611r.pdf
Ordering number : ENA2291A EFC6611R N-Channel Power MOSFET http://onsemi.com 12V, 27A, 3.2m, Dual EFCP Features 2.5V drive Common-drain type Protection diode in 2KV ESD HBM Halogen free compliance Applications Lithium-ion battery charging and discharging switch Specifications EFCP3517-6DGH-020 Absolute Maximum Ratings at Ta = 25C Paramet
efc6601r.pdf
Ordering number : ENA2151AEFC6601RN-Channel Power MOSFEThttp://onsemi.com24V, 13A, 11.5m , Dual EFCPFeatures 2.5V drive Protection diode in Common-drain type Halogen free compliance 2KV ESD HBMSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitSource-to-Source Voltage VSSS 24 VGate-to-Source Voltage VGSS
efc6605r.pdf
Ordering number : ENA2302 EFC6605R N-Channel Power MOSFEThttp://onsemi.com 20V, 10A, 13.3m, Dual EFCP Features 2.5V drive Common-drain type Protection diode in 2KV ESD HBM Halogen free compliance Applications Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions V
efc6604r.pdf
Ordering number : ENA2204A EFC6604R N-Channel Power MOSFEThttp://onsemi.com 12V, 13A, 9.0m, Dual EFCP Features 2.5V drive Protection diode in Common-drain type Halogen free compliance 2KV ESD HBM Applications Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions R
efc6602r.pdf
Ordering number : ENA2152AEFC6602RN-Channel Power MOSFEThttp://onsemi.com12V, 18A, 5.9m , Dual EFCPFeatures 2.5V drive Protection diode in Common-drain type Halogen free compliance 2KV ESD HBMSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitSource-to-Source Voltage VSSS 12 VGate-to-Source Voltage VGSS
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918