EKI07076 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: EKI07076
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 135 W
Предельно допустимое напряжение сток-исток |Uds|: 75 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 85 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 91.6 nC
Время нарастания (tr): 10.1 ns
Выходная емкость (Cd): 575 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0069 Ohm
Тип корпуса: TO-220
EKI07076 Datasheet (PDF)
eki07076.pdf
75 V, 85 A, 5.3 m Low RDS(ON) N ch Trench Power MOSFET EKI07076 Features Package V(BR)DSS --------------------------------- 75 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 85 A D RDS(ON) ---------- 6.9 m max. (VGS = 10 V, ID = 44.0 A) Qg ------42.9 nC (VGS = 4.5 V, VDS = 38 V, ID = 44.0 A) Low Total Gate
eki07076.pdf
isc N-Channel MOSFET Transistor EKI07076FEATURESDrain Current I =85A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R = 6.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
eki07174.pdf
75 V, 46 A, 10.4 m Low RDS(ON) N ch Trench Power MOSFET EKI07174 Features Package V(BR)DSS --------------------------------- 75 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 46 A D RDS(ON) -------- 14.1 m max. (VGS = 10 V, ID = 22.8 A) Qg ------15.0 nC (VGS = 4.5 V, VDS = 38 V, ID = 22.8 A) Low Total Gate
eki07117.pdf
75 V, 62 A, 7.2 m Low RDS(ON) N ch Trench Power MOSFET EKI07117 Features Package V(BR)DSS --------------------------------- 75 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 62 A D RDS(ON) ---------- 9.7 m max. (VGS = 10 V, ID = 31.2 A) Qg ------25.0 nC (VGS = 4.5 V, VDS = 38 V, ID = 31.2 A) Low Total Gate
eki07174.pdf
isc N-Channel MOSFET Transistor EKI07174FEATURESDrain Current I =46A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R = 14.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
eki07117.pdf
isc N-Channel MOSFET Transistor EKI07117FEATURESDrain Current I =62A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R = 9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
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