EKI07076 - описание и поиск аналогов

 ..1. Size:246K  sanken-ele
 eki07076.pdf 

75 V, 85 A, 5.3 m Low RDS(ON) N ch Trench Power MOSFET EKI07076 Features Package V(BR)DSS --------------------------------- 75 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 85 A D RDS(ON) ---------- 6.9 m max. (VGS = 10 V, ID = 44.0 A) Qg ------42.9 nC (VGS = 4.5 V, VDS = 38 V, ID = 44.0 A) Low Total Gate

 ..2. Size:251K  inchange semiconductor
 eki07076.pdf 

isc N-Channel MOSFET Transistor EKI07076 FEATURES Drain Current I =85A@ T =25 D C Drain Source Voltage- V =75V(Min) DSS Static Drain-Source On-Resistance R = 6.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.1. Size:246K  sanken-ele
 eki07174.pdf 

75 V, 46 A, 10.4 m Low RDS(ON) N ch Trench Power MOSFET EKI07174 Features Package V(BR)DSS --------------------------------- 75 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 46 A D RDS(ON) -------- 14.1 m max. (VGS = 10 V, ID = 22.8 A) Qg ------15.0 nC (VGS = 4.5 V, VDS = 38 V, ID = 22.8 A) Low Total Gate

 9.2. Size:246K  sanken-ele
 eki07117.pdf 

75 V, 62 A, 7.2 m Low RDS(ON) N ch Trench Power MOSFET EKI07117 Features Package V(BR)DSS --------------------------------- 75 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 62 A D RDS(ON) ---------- 9.7 m max. (VGS = 10 V, ID = 31.2 A) Qg ------25.0 nC (VGS = 4.5 V, VDS = 38 V, ID = 31.2 A) Low Total Gate

 9.3. Size:251K  inchange semiconductor
 eki07174.pdf 

isc N-Channel MOSFET Transistor EKI07174 FEATURES Drain Current I =46A@ T =25 D C Drain Source Voltage- V =75V(Min) DSS Static Drain-Source On-Resistance R = 14.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.4. Size:250K  inchange semiconductor
 eki07117.pdf 

isc N-Channel MOSFET Transistor EKI07117 FEATURES Drain Current I =62A@ T =25 D C Drain Source Voltage- V =75V(Min) DSS Static Drain-Source On-Resistance R = 9.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose