Справочник MOSFET. ELM13434CA

 

ELM13434CA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ELM13434CA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 5.7 nC
   trⓘ - Время нарастания: 5.5 ns
   Cossⓘ - Выходная емкость: 65 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.052 Ohm
   Тип корпуса: SOT-23

 Аналог (замена) для ELM13434CA

 

 

ELM13434CA Datasheet (PDF)

 ..1. Size:492K  elm
 elm13434ca.pdf

ELM13434CA ELM13434CA

Single N-channel MOSFETELM13434CA-SGeneral description Features The ELM13434CA-S uses advanced trench technology to Vds=30Vprovide excellent RDS(ON) and low gate charge. This Id=4.2A (Vgs=10V)device is suitable for use as a load switch or in PWM Rds(on)

 8.1. Size:586K  elm
 elm13424ca.pdf

ELM13434CA ELM13434CA

Single N-channel MOSFETELM13424CA-SGeneral description Features ELM13424CA-S uses advanced trench technology Vds=30Vto provide excellent Rds(on), low gate charge and Id=3.8A (Vgs=10V)operation with gate voltages as low as 2.5V. Rds(on)

 8.2. Size:385K  elm
 elm13421ca.pdf

ELM13434CA ELM13434CA

Single P-channel MOSFETELM13421CA-SGeneral description Features ELM13421CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-2.6A (Vgs=-10V)resistance. Rds(on)

 8.3. Size:385K  elm
 elm13414ca.pdf

ELM13434CA ELM13434CA

Single N-channel MOSFETELM13414CA-SGeneral description Features ELM13414CA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=4.2A (Vgs=4.5V)operation with gate voltages as low as 1.8V. Rds(on)

 8.4. Size:785K  elm
 elm13419ca.pdf

ELM13434CA ELM13434CA

P MOSFETELM13419CA-S ELM13419CA-S P Vds=-20V MOSFET Id=-3.5A (Vgs=-10V) ESD Rds(on)

 8.5. Size:652K  elm
 elm13416ca.pdf

ELM13434CA ELM13434CA

Single N-channel MOSFETELM13416CA-SGeneral description Features ELM13416CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and operation Id=6.5A (Vgs=4.5V)with gate voltages as low as 1.8V and internal ESD Rds(on)

 8.6. Size:385K  elm
 elm13413ca.pdf

ELM13434CA ELM13434CA

Single P-channel MOSFETELM13413CA-SGeneral description Features ELM13413CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3A (Vgs=-4.5V)resistance. Rds(on)

 8.7. Size:782K  elm
 elm13400ca-s.pdf

ELM13434CA ELM13434CA

Single N-channel MOSFETELM13400CA-SGeneral description Features ELM13400CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=5.8A (Vgs=10V)resistance. Rds(on)

 8.8. Size:388K  elm
 elm13418ca.pdf

ELM13434CA ELM13434CA

Single N-channel MOSFETELM13418CA-SGeneral description Features ELM13418CA-S uses advanced trench technology Vds=30Vto provide excellent Rds(on), low gate charge and Id=3.8A (Vgs=10V)operation with gate voltages as low as 2.5V. Rds(on)

 8.9. Size:220K  elm
 elm13403ca.pdf

ELM13434CA ELM13434CA

Single P-channel MOSFETELM13403CA-SGeneral description Features ELM13403CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-2.6A (Vgs=-10V)resistance. Rds(on)

 8.10. Size:781K  elm
 elm13407ca-s.pdf

ELM13434CA ELM13434CA

Single P-channel MOSFETELM13407CA-SGeneral description Features ELM13407CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-4.1A (Vgs=-10V)resistance. Rds(on)

 8.11. Size:385K  elm
 elm13409ca.pdf

ELM13434CA ELM13434CA

Single P-channel MOSFETELM13409CA-SGeneral description Features ELM13409CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-2.6A (Vgs=-10V)resistance. Rds(on)

 8.12. Size:373K  elm
 elm13401ca.pdf

ELM13434CA ELM13434CA

Single P-channel MOSFETELM13401CA-SGeneral description Features ELM13401CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-4.2A (Vgs=-10V)resistance. Rds(on)

 8.13. Size:405K  elm
 elm13402ca.pdf

ELM13434CA ELM13434CA

Single N-channel MOSFETELM13402CA-SGeneral description Features ELM13402CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=4A (Vgs=10V)resistance. Rds(on)

 8.14. Size:406K  elm
 elm13406ca.pdf

ELM13434CA ELM13434CA

Single N-channel MOSFETELM13406CA-SGeneral description Features ELM13406CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=3.6A (Vgs=10V)resistance. Rds(on)

 8.15. Size:718K  elm
 elm13415ca.pdf

ELM13434CA ELM13434CA

Single P-channel MOSFETELM13415CA-SGeneral description Features ELM13415CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-4A (Vgs=-4.5V)resistance. Internal ESD protection is included. Rds(on)

 8.16. Size:391K  elm
 elm13404ca.pdf

ELM13434CA ELM13434CA

Single N-channel MOSFETELM13404CA-SGeneral description Features ELM13404CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=5.8A (Vgs=10V)resistance. Rds(on)

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