ELM18814BA - аналоги, параметры транзистора - Справочник транзисторов

ELM18814BA даташит

..1. Size:395K elm
elm18814ba.pdf pdf_icon

(common drain) Dual N-channel MOSFET ELM18814BA-S General description Features ELM18814BA-S uses advanced trench technology Vds=20V to provide excellent Rds(on), low gate charge and Id=7.5A (Vgs=10V) operation with gate voltages as low as 1.8V and internal Rds(on)

7.1. Size:392K elm
elm18810ba.pdf pdf_icon

(common drain) Dual N-channel MOSFET ELM18810BA-S General description Features ELM18810BA-S uses advanced trench technology Vds=20V to provide excellent Rds(on), low gate charge and Id=7A (Vgs=4.5V) operation with gate voltages as low as 1.8V and internal Rds(on)

8.1. Size:390K elm
elm18801ba.pdf pdf_icon

Dual P-channel MOSFET ELM18801BA-S General description Features ELM18801BA-S uses advanced trench technology to Vds=-20V provide excellent Rds(on) and low gate charge. Internal Id=-4.7A (Vgs=-4.5V) ESD protection is included. Rds(on)

8.2. Size:395K elm
elm18822ba.pdf pdf_icon

(common drain) Dual N-channel MOSFET ELM18822BA-S General description Features ELM18822BA-S uses advanced trench technology to Vds=20V provide excellent Rds(on) and low gate charge. Id=7A (Vgs=10V) Rds(on)