ELM32430LA
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: ELM32430LA
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 55
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 45
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 7
ns
Cossⓘ - Выходная емкость: 290
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028
Ohm
Тип корпуса:
TO-252
- подбор MOSFET транзистора по параметрам
ELM32430LA
Datasheet (PDF)
..1. Size:547K elm
elm32430la.pdf 

Single N-channel MOSFETELM32430LA-SGeneral description Features ELM32430LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=45A resistance. Rds(on)
7.1. Size:600K elm
elm32434la.pdf 

Single N-channel MOSFETELM32434LA-SGeneral description Features ELM32434LA-S uses advanced trench technology to Vds=600Vprovide excellent Rds(on), low gate charge and low gate Id=2A resistance. Rds(on)
8.1. Size:595K elm
elm32424la.pdf 

Single N-channel MOSFETELM32424LA-SGeneral description Features ELM32424LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=50A resistance. Rds(on)
8.2. Size:604K elm
elm32403la.pdf 

Single P-channel MOSFETELM32403LA-SGeneral description Features ELM32403LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)
8.3. Size:430K elm
elm32428la.pdf 

Single N-channel MOSFETELM32428LA-SGeneral description Features ELM32428LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=75A resistance. Rds(on)
8.4. Size:452K elm
elm32414la.pdf 

Single N-channel MOSFETELM32414LA-SGeneral description Features ELM32414LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=35A resistance. Rds(on)
8.5. Size:648K elm
elm32404la.pdf 

Single N-channel MOSFETELM32404LA-SGeneral description Features ELM32404LA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)
8.6. Size:801K elm
elm32409la-s.pdf 

Single P-channel MOSFETELM32409LA-SGeneral description Features ELM32409LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-10A resistance. Rds(on)
8.7. Size:609K elm
elm32408la.pdf 

Single N-channel MOSFETELM32408LA-SGeneral description Features ELM32408LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)
8.8. Size:592K elm
elm32422la.pdf 

Single N-channel MOSFETELM32422LA-SGeneral description Features ELM32422LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=60A resistance. Rds(on)
8.9. Size:658K elm
elm32418la.pdf 

Single N-channel MOSFETELM32418LA-SGeneral description Features ELM32418LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)
8.10. Size:982K elm
elm32401la-s.pdf 

Single P-channel MOSFETELM32401LA-SGeneral description Features ELM32401LA-S uses advanced trench technology to Vds=-60Vprovide excellent Rds(on), low gate charge and low gate Id=-7A resistance. Rds(on)
8.11. Size:625K elm
elm32402la.pdf 

Single N-channel MOSFETELM32402LA-SGeneral description Features ELM32402LA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)
8.12. Size:625K elm
elm32420la.pdf 

Single N-channel MOSFETELM32420LA-SGeneral description Features ELM32420LA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=45A resistance. Rds(on)
8.13. Size:578K elm
elm32405la.pdf 

Single P-channel MOSFETELM32405LA-SGeneral description Features ELM32405LA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)
8.14. Size:591K elm
elm32416la.pdf 

Single N-channel MOSFETELM32416LA-SGeneral description Features ELM32416LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=46A resistance. Rds(on)
8.15. Size:601K elm
elm32407la.pdf 

Single P-channel MOSFETELM32407LA-SGeneral description Features ELM32407LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-18A resistance. Rds(on)
8.16. Size:602K elm
elm32400la.pdf 

Single N-channel MOSFETELM32400LA-SGeneral description Features ELM32400LA-S uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)
8.17. Size:473K elm
elm32412la.pdf 

Single N-channel MOSFETELM32412LA-SGeneral description Features ELM32412LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)
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.
History: IRF241
| NCE70T180D