RFP70N06. Аналоги и основные параметры
Наименование производителя: RFP70N06
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 137 ns
Cossⓘ - Выходная емкость: 792 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
Тип корпуса: TO220AB
Аналог (замена) для RFP70N06
- подборⓘ MOSFET транзистора по параметрам
RFP70N06 даташит
rfg70n06 rfp70n06 rf1s70n06 rf1s70n06sm.pdf
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet February 2005 70A, 60V, 0.014 Ohm, N-Channel Power Features MOSFETs 70A, 60V These are N-Channel power MOSFETs manufactured using rDS(on) = 0.014 the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silic
rfp70n06.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
rfp70n06.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor RFP70N06 DESCRIPTION Drain Current I =70A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in applications such as sw
rfp70n03 rf1s70n03sm.pdf
RFP70N03, RF1S70N03SM Data Sheet July 1999 File Number 3404.4 70A, 30V, 0.010 Ohm, N-Channel Power Features MOSFETs 70A, 30V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.010 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of sili
Другие IGBT... RFP4N05L, RFP4N06L, RFP4N100, RFP50N05L, RFP50N06, RFP50N06LE, RFP60P03, RFP70N03, AO3400A, RFP7N10LE, RFP8N20L, RFP8P05, RFP8P06E, RFP8P06LE, RFP8P10, RFT1P06E, RFT2P03L
History: SWF540
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